Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs
p.11
p.11
Coherency between Epitaxial Defectivity, Surface Voltage, Photoluminescence Mapping and Electrical Wafer Sorting for 200mm SiC Wafers
p.19
p.19
Defect Density Reduction in 4H-SiC (0001) Epilayer via Growth-Interruption during Buffer Layer Growth
p.27
p.27
Dynamics of Stacking Fault Expansion in H+ Implanted SiC-MOSFETs
p.33
p.33
Challenges in Investigating UIS Material-Based Failures & Yield Prediction in the Absence of Robust 4H-SiС Epiwafer Quality Standards
p.41
p.41
Polarization Superimposed Phase Contrast Microscope Inspection of Dislocations in SiC Epitaxial Layer
p.47
p.47
High Temperature Evolution of Thin Films Confined between Two SiC Substrates
p.55
p.55
Non-Contact Full Wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
p.63
p.63
How to Simulate Bipolar Degradation by UV Irradiation with High Accuracy
p.71
p.71
Polarization Superimposed Phase Contrast Microscope Inspection of Dislocations in SiC Epitaxial Layer
Abstract:
We introduce a polarization superimposed phase contrast microscope (PS-PCM) for wide-gap semiconductor wafers as a new analytical technique that enables non-destructive and three-dimensional characterization of threading dislocations; TSDs and TEDs in SiC epilayers and substrates, such as discrimination each other or detection of their inclination in the depth direction.
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Periodical:
Solid State Phenomena (Volume 376)
Pages:
47-54
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Online since:
September 2025
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