Defect Density Reduction in 4H-SiC (0001) Epilayer via Growth-Interruption during Buffer Layer Growth

Shiv Kumar; Lakshmi Kanta Bera; Xuan Sang Nguyen; Wen Dong Song; An Min Amanda Lee; Xin Yi Li; Eng Soon Tok; Madurai Srinivasan Bharathi; Chilla Damodara Reddy; Umesh Chand; Surasit Chung; Navab Singh; Yee Chia Yeo

doi:10.4028/p-CV0Eru

Paper Titles

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Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs
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Coherency between Epitaxial Defectivity, Surface Voltage, Photoluminescence Mapping and Electrical Wafer Sorting for 200mm SiC Wafers
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Defect Density Reduction in 4H-SiC (0001) Epilayer via Growth-Interruption during Buffer Layer Growth
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Dynamics of Stacking Fault Expansion in H⁺ Implanted SiC-MOSFETs
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Challenges in Investigating UIS Material-Based Failures & Yield Prediction in the Absence of Robust 4H-SiС Epiwafer Quality Standards
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Polarization Superimposed Phase Contrast Microscope Inspection of Dislocations in SiC Epitaxial Layer
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High Temperature Evolution of Thin Films Confined between Two SiC Substrates
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HomeSolid State PhenomenaSolid State Phenomena Vol. 376Defect Density Reduction in 4H-SiC (0001) Epilayer...

Defect Density Reduction in 4H-SiC (0001) Epilayer via Growth-Interruption during Buffer Layer Growth

Abstract:

In this paper, we have investigated the influence of growth-interruption during buffer layer growth on killer defect density in SiC epilayer grown over 4H-SiC (0001) substrates. We have observed that the growth-interruption method reduces total killer defect density by ~45(±5)%. Implementing growth-interruption in the buffer layer is a novel approach to mitigate epitaxial defects such as in-grown stacking faults (SFs), triangular defects, and basal plane dislocations (BPDs) in the drift layer and provide an extra margin to bipolar degradation by terminating BPDs early in the heavily doped buffer layer. The defect reduction mechanism in the presence of hydrogen has been simulated using Kinetic Monte Carlo (KMC) simulations.

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Periodical:

Solid State Phenomena (Volume 376)

Pages:

27-31

DOI:

https://doi.org/10.4028/p-CV0Eru

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Online since:

September 2025

Authors:

Shiv Kumar*, Lakshmi Kanta Bera, Xuan Sang Nguyen, Wen Dong Song, An Min Amanda Lee, Xin Yi Li, Eng Soon Tok, Madurai Srinivasan Bharathi, Chilla Damodara Reddy, Umesh Chand, Surasit Chung, Navab Singh, Yee Chia Yeo

Keywords:

4H-SiC, Defect Reduction, Epitaxy Growth

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* - Corresponding Author

References

[1] T. Kobayashi, K. Harada; Y. Kumagai, F. Oba, Y.-I. Matsushita, Native point defects and carbon clusters in 4H-SiC: A hybrid functional study, J. Appl. Phys. 125 (2019) 125701.

DOI: 10.1063/1.5089174

Google Scholar

[2] S. Wei, Z. Yin, J. Bai, W. Xie, F. Qin, Y. Su, D. Wang, The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface, Appl. Surf. Sci. 582 (2022) 152461.

DOI: 10.1016/j.apsusc.2022.152461

Google Scholar

[3] F. Ren, J. C. Zolper, Wide energy bandgap electronic devices, World Scientific Publishing, Singapore, 2003.

Google Scholar

[4] T. Kimoto, J. A. Cooper, Fundamentals of Silicon Carbide Technology, Wiley, Singapore, 2014.

Google Scholar

[5] L. Zhao, Surface defects in 4H-SiC homoepitaxial layers, Nanotechnol. Precis. Eng. 3 (2020) 229.

Google Scholar

[6] R. E. Stahlbush, B. L. VanMil, R. L. Myers-Ward, K-K. Lew, D. K. Gaskill, C. R. Eddy Jr., Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions, Appl. Phys. Lett. 94 (2009) 041916.

DOI: 10.1063/1.3070530

Google Scholar

[7] T. Rana, J. Wu, V. Pushkarav, I. Manning, A study of process interruptions during pre- and post-buffer layer epitaxial growth for defect reduction in 4H SiC, ICSCRM (2023) 950.

DOI: 10.4028/p-1lgglq

Google Scholar

[8] X. Gong, T. Xie, F. Hu, P. Li, S. Ba, L. Wang, W. Zhu, High-quality 4H-SiC homogeneous epitaxy via homemade horizontal hot-wall reactor, Coatings 14 (2024) 911.

DOI: 10.3390/coatings14070911

Google Scholar

[9] M. Camarda, A. L. Magna, F. L. Via, J. Comput. Phys. 227 (2007) 1075.

Google Scholar