Dynamics of Stacking Fault Expansion in H+ Implanted SiC-MOSFETs

Kazuya Ishibashi; Naoki Shikama; Hiroki Niwa; Takanori Tanaka; Hiroyuki Amishiro; Akifumi Imai; Katsutoshi Sugawara; Yasuhiro Kagawa; Akihiko Furukawa

doi:10.4028/p-MI3pHl

Paper Titles

Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
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Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs
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Coherency between Epitaxial Defectivity, Surface Voltage, Photoluminescence Mapping and Electrical Wafer Sorting for 200mm SiC Wafers
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Defect Density Reduction in 4H-SiC (0001) Epilayer via Growth-Interruption during Buffer Layer Growth
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Dynamics of Stacking Fault Expansion in H⁺ Implanted SiC-MOSFETs
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Challenges in Investigating UIS Material-Based Failures & Yield Prediction in the Absence of Robust 4H-SiС Epiwafer Quality Standards
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Polarization Superimposed Phase Contrast Microscope Inspection of Dislocations in SiC Epitaxial Layer
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High Temperature Evolution of Thin Films Confined between Two SiC Substrates
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Non-Contact Full Wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
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HomeSolid State PhenomenaSolid State Phenomena Vol. 376Dynamics of Stacking Fault Expansion in H+...

Dynamics of Stacking Fault Expansion in H⁺ Implanted SiC-MOSFETs

Abstract:

Bipolar degradation is a well-known issue when using body diodes in SiC-MOSFETs. Recent studies suggest that H⁺ (proton) implantation can effectively inhibit this degradation, but demonstrations on its suppression are still limited. Therefore, in this study, we have experimentally demonstrated how the expansion of Shockley-type stacking faults (SSFs) is suppressed by proton implantation. We fabricated a vertical SiC-MOSFET, in which protons were implanted into the middle depth of the drift layer. We then subjected the body diode to continuous current stress and performed photoluminescence (PL) analysis. Detailed PL image and emission spectral analysis of SSFs revealed that the proton-implanted layer can function as a recombination-enhancing layer during bipolar operation. Furthermore, it can be formed at any depth within the drift layer by controlling the energy, offering a significant advantage in the design of SiC-MOSFETs.

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Periodical:

Solid State Phenomena (Volume 376)

Pages:

33-40

DOI:

https://doi.org/10.4028/p-MI3pHl

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Online since:

September 2025

Authors:

Kazuya Ishibashi*, Naoki Shikama, Hiroki Niwa, Takanori Tanaka, Hiroyuki Amishiro, Akifumi Imai, Katsutoshi Sugawara, Yasuhiro Kagawa, Akihiko Furukawa

Keywords:

Bipolar Degradation, Body Diode, MOSFET, Proton Implantation, Stacking Fault

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* - Corresponding Author

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