How to Simulate Bipolar Degradation by UV Irradiation with High Accuracy

Yasuyuki Igarashi; Kazumi Takano; Yohsuke Matsushita; Takuya Morita

doi:10.4028/p-H8wzJA

Paper Titles

Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs
p.11

Coherency between Epitaxial Defectivity, Surface Voltage, Photoluminescence Mapping and Electrical Wafer Sorting for 200mm SiC Wafers
p.19

Defect Density Reduction in 4H-SiC (0001) Epilayer via Growth-Interruption during Buffer Layer Growth
p.27

Dynamics of Stacking Fault Expansion in H⁺ Implanted SiC-MOSFETs
p.33

Challenges in Investigating UIS Material-Based Failures & Yield Prediction in the Absence of Robust 4H-SiС Epiwafer Quality Standards
p.41

Polarization Superimposed Phase Contrast Microscope Inspection of Dislocations in SiC Epitaxial Layer
p.47

High Temperature Evolution of Thin Films Confined between Two SiC Substrates
p.55

Non-Contact Full Wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data
p.63

How to Simulate Bipolar Degradation by UV Irradiation with High Accuracy
p.71

HomeSolid State PhenomenaSolid State Phenomena Vol. 376How to Simulate Bipolar Degradation by UV...

How to Simulate Bipolar Degradation by UV Irradiation with High Accuracy

Abstract:

The reliability issue of the bipolar degradation in 4H-SiC devices has not been completely eliminated. We have been proposing a screening method for latent defects causing this reliability issue utilizing UV irradiation, which we call the E-V-C (Expansion-Visualization-Contraction) method. This method is based on the property that the REDG (recombination-enhanced dislocation glide) mechanism that causes the bipolar degradation can be reproduced by UV irradiation. However, in order to apply this method as a screening method, accurate quantification of the correlation between current density in forward bias and UV irradiance is required. In this article, we estimated the extent to which the carrier lifetime of the sample affects the quantification of the correlation and found that it had a non-negligible degree of influence on the correlation. Then, we tried to find if there is a simple method for estimating carrier lifetime that can be incorporated in the screening process, and report on our attempts in progress.

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Periodical:

Solid State Phenomena (Volume 376)

Pages:

71-77

DOI:

https://doi.org/10.4028/p-H8wzJA

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Online since:

September 2025

Authors:

Yasuyuki Igarashi*, Kazumi Takano, Yohsuke Matsushita, Takuya Morita

Keywords:

Basal Plane Dislocation, Bipolar Degradation, Carrier Lifetime, Photoluminescence, Recombination-Enhanced Dislocation Glide, Screening, Single Shockley Stacking Fault, UV Irradiation

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* - Corresponding Author

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