Preface
Growth of 8-Inch SiC Single Crystals with Low Basal Plane Dislocation Density
p.1
p.1
300 mm 4H-SiC Crystal and Substrate Development
p.7
p.7
Epitaxial Growth and Characterization of 4H-SiC Layer on C-Face and Si-Face Substrates
p.15
p.15
Development of High Concentration Uniformity Epitaxial Growth on 200 mm 4H-SiC Wafers
p.21
p.21
Ultra-Pure SiC Source Material for Optical SiC Crystal Growth
p.27
p.27
Ultra-Thick (~200µm) Epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
p.35
p.35
Solution Growth Technique of Silicon Carbide with In Situ Observation
p.41
p.41
Close Space PVT Growth of N- and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCSTM Growth Machine
p.47
p.47
Preface
Abstract:
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