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Close Space PVT Growth of N- and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCSTM Growth Machine

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Abstract:

Close Space PVT (CS-PVT) is a modification of standard PVT exhibiting a short source-to-seed-distance and enabling a large variety of growth process variations to meet the specific requirements of the SiC material (i.e. special polytype and/or doping) to be grown. In this work, we study the growth of 4H-SiC p-i-n structures exhibiting thick SiC layers to be used as SiC photovoltaic cells for remote power transfer in space. Nevertheless, the found results are also applicable (i) to the SiC thick layer growth of power electronic devices and (ii) SiC pucks with a thickness of up to 10mm. In addition, we present the new type of growth machine TableTopCSTM in its design being dedicated for the special crucible configuration of CS-PVT.

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Periodical:

Solid State Phenomena (Volume 393)

Pages:

47-52

DOI:

https://doi.org/10.4028/p-Ro32jp

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Cite this paper

Online since:

May 2026

Authors:

Sven Strüber, Cristina Grazzi, Lucrezia Tana, Ole Schneider, Tobias Wagner, Jakob Wiedemann, P. Wunder, P. J. Wellmann*

Keywords:

4H-SiC, Bulk Growth, Close Space PVT, CS-PVT Growth, Doping, Thick Epitaxy

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Creative Commons CC BY 4.0

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* - Corresponding Author

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