Remote Epitaxy of SiC: Feasibility, Challenges, and Pathways

Abstract:

Silicon carbide (SiC) is a promising wide-bandgap semiconductor for advanced quantum technologies. Yet, despite progress in bulk and epitaxial growth, a reliable SiC-on-insulator platform remains lacking. Remote epitaxy, mediated by a 2D interlayer, offers a potential pathway to transferable SiC thin films and substrate reuse. In this work, we examine remote epitaxial growth of SiC on epitaxial graphene. We first evaluate the stability of graphene under SiC growth conditions and find that it degrades significantly at the required high temperatures, primarily due to hydrogen and silane etching. With the conditions yielding the highest-quality SiC epitaxial layer; graphene migrates above the SiC rather than remaining at the interface, demonstrating that true remote epitaxy is not achieved. These results highlight the fundamental challenges of SiC remote epitaxy on graphene and point toward critical directions for future exploration.

• Periodical: Solid State Phenomena (Volume 393)
• Pages: 71-77
• DOI: https://doi.org/10.4028/p-9UOfEY
• Online since: May 2026
• Authors: Misagh Ghezellou*, Justinas Palisaitis, Jawad Ul-Hassan
• Keywords: CVD, Graphene, Remote Epitaxy

References

[1] T. Kimoto and Y. Yonezawa, "Current status and perspectives of ultrahigh-voltage sic power devices," Materials Science in Semiconductor Processing, vol. 78, pp.43-56, 2018.

DOI: 10.1016/j.mssp.2017.10.010

[2] H. Tsuchida, I. Kamata, T. Miyazawa, M. Ito, X. Zhang, and M. Nagano, "Recent advances in 4h-sic epitaxy for high-voltage power devices," Materials Science in Semiconductor Processing, vol. 78, pp.2-12, 2018.

DOI: 10.1016/j.mssp.2017.11.003

[3] F. La Via, D. Alquier, F. Giannazzo, T. Kimoto, P. Neudeck, H. Ou, A. Roncaglia, S. E. Saddow, and S. Tudisco, "Emerging sic applications beyond power electronic devices," Micromachines, vol. 14, no. 6, p.1200, 2023.

DOI: 10.3390/mi14061200

[4] M. Buffolo, D. Favero, A. Marcuzzi, C. De Santi, G. Meneghesso, E. Zanoni, and M. Meneghini, "Review and outlook on gan and sic power devices: industrial state-of-the-art, applications, and perspectives," IEEE Transactions on Electron Devices, 2024.

DOI: 10.1109/ted.2023.3346369

[5] D. M. Lukin, M. A. Guidry, J. Yang, M. Ghezellou, S. Deb Mishra, H. Abe, T. Ohshima, J. UlHassan, and J. Vučković, "Two-emitter multimode cavity quantum electrodynamics in thin-film silicon carbide photonics," Physical Review X, vol. 13, no. 1, p.011005, 2023.

DOI: 10.1103/physrevx.13.011005

[6] D. J. Christle, A. L. Falk, P. Andrich, P. V. Klimov, J. U. Hassan, N. T. Son, E. Janzén, T. Ohshima, and D. D. Awschalom, "Isolated electron spins in silicon carbide with millisecond coherence times," Nature materials, vol. 14, no. 2, pp.160-163, 2015.

DOI: 10.1038/nmat4144

[7] T. Bosma, J. Hendriks, M. Ghezellou, N. T. Son, J. Ul-Hassan, and C. H. van der Wal, "Broadband single-mode planar waveguides in monolithic 4h-sic," Journal of Applied Physics, vol. 131, no. 2, p.025703, 2022.

DOI: 10.1063/5.0077164

[8] H. Kim, C. S. Chang, S. Lee, J. Jiang, J. Jeong, M. Park, Y. Meng, J. Ji, Y. Kwon, X. Sun et al., "Remote epitaxy," Nature Reviews Methods Primers, vol. 2, no. 1, p.40, 2022.[9] C. S. Chang, K. S. Kim, B.-I. Park, J. Choi, H. Kim, J. Jeong, M. Barone, N. Parker, S. Lee, X. Zhang et al., "Remote epitaxial interaction through graphene," Science Advances, vol. 9, no. 42, p. eadj5379, 2023.

DOI: 10.1038/s43586-022-00122-w

[10] H.-J. S. Roland Rupp, Guenther Ruhl, "Semiconductor device and a method for forming a semiconductor device," U. S. Patent No. 20170018614A1, 25 Dec 2018.

[11] Y. Kim, S. S. Cruz, K. Lee, B. O. Alawode, C. Choi, Y. Song, J. M. Johnson, C. Heidelberger, W. Kong, S. Choi et al., "Remote epitaxy through graphene enables two-dimensional materialbased layer transfer," Nature, vol. 544, no. 7650, pp.340-343, 2017.

DOI: 10.1038/nature22053

[12] K. Chung, C.-H. Lee, and G.-C. Yi, "Transferable gan layers grown on zno-coated graphene layers for optoelectronic devices," Science, vol. 330, no. 6004, pp.655-657, 2010.

DOI: 10.1126/science.1195403

[13] S. Manzo, P. J. Strohbeen, Z. H. Lim, V. Saraswat, D. Du, S. Xu, N. Pokharel, L. J. Mawst, M. S. Arnold, and J. K. Kawasaki, "Pinhole-seeded lateral epitaxy and exfoliation of gasb films on graphene-terminated surfaces," Nature communications, vol. 13, no. 1, p.4014, 2022.

DOI: 10.1038/s41467-022-31610-y

[14] T. Ueda, H. Nishino, and H. Matsunami, "Crystal growth of sic by step-controlled epitaxy," Journal of Crystal Growth, vol. 104, no. 3, pp.695-700, 1990.

DOI: 10.1016/0022-0248(90)90013-b

[15] X. Wang, J. Choi, J. Yoo, and Y. J. Hong, "Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2d materials-coated substrates," Nano Convergence, vol. 10, no. 1, p.40, Aug 2023.

DOI: 10.1186/s40580-023-00387-1

[16] G. R. Yazdi, T. Iakimov, and R. Yakimova, "Epitaxial graphene on sic: a review of growth and characterization," Crystals, vol. 6, no. 5, p.53, 2016.

DOI: 10.3390/cryst6050053

[17] A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth et al., "Raman spectrum of graphene and graphene layers," Physical review letters, vol. 97, no. 18, p.187401, 2006.

DOI: 10.1103/physrevlett.97.187401

[18] R. Yakimova, C. Virojanadara, D. Gogova, M. Syväjärvi, D. Siche, K. Larsson, and L. I. Johansson, "Analysis of the formation conditions for large area epitaxial graphene on sic substrates," in Materials Science Forum, vol. 645. Trans Tech Publ, 2010, pp.565-568.

DOI: 10.4028/www.scientific.net/msf.645-648.565

[19] Z. Y. Al Balushi, K. Wang, R. K. Ghosh, R. A. Vilá, S. M. Eichfeld, J. D. Caldwell, X. Qin, Y.- C. Lin, P. A. DeSario, G. Stone et al., "Two-dimensional gallium nitride realized via graphene encapsulation," Nature materials, vol. 15, no. 11, pp.1166-1171, 2016.

DOI: 10.1038/nmat4742