Paper Titles
Ultra-Pure SiC Source Material for Optical SiC Crystal Growth
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Ultra-Thick (~200µm) Epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
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Solution Growth Technique of Silicon Carbide with In Situ Observation
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Close Space PVT Growth of N- and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCSTM Growth Machine
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Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals
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Optimization of Seed Crystal Stability at the Initial Growth Stage Depending on Heating Ramp Rates and Gas Flow Channels of SiC Source Powder for Growth of 8-inch N- Type 4H-SiC Single Crystal
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Growth and Characterization of “IsoPure” Epitaxial Layers for Quantum Applications
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Remote Epitaxy of SiC: Feasibility, Challenges, and Pathways
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Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single Crystals
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Growth and Characterization of “IsoPure” Epitaxial Layers for Quantum Applications

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Abstract:

This paper compares ethene and methane precursors for homoepitaxial 4H-SiC growth in planetary reactors with regards to their impact on growth rate and defectivity of the epilayers. Therefore, a comprehensive experimental study has been performed in AIXTRON G10-SiC and G5WW C planetary reactors using a standard process based on ethene and trichlorosilane precursors with conventional 150 mm n-type 4H-SiC substrates from 3 different international suppliers. Methane substituted ethene as precursor in many experiments. It was found that methane precursor can compete with ethene in terms of growth rate, epilayer thickness, and defectivity of the epilayers. By using isotopically enriched methane, Si12C epilayers with a 12C concentration of 99.96 % have been grown which can be used for SiC-based quantum technology.

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Periodical:

Solid State Phenomena (Volume 393)

Pages:

65-70

DOI:

https://doi.org/10.4028/p-gZ2hnG

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Cite this paper

Online since:

May 2026

Authors:

Birgit Kallinger*, Christian Gobert, Maximilian Titl, Robin Karhu, Johannes Köhler, Jürgen Erlekampf

Keywords:

Defects, Epitaxial Growth, Isotopically Enriched, Precursors, Quantum Technology

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