Ultra-Pure SiC Source Material for Optical SiC Crystal Growth
p.27
p.27
Ultra-Thick (~200µm) Epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
p.35
p.35
Solution Growth Technique of Silicon Carbide with In Situ Observation
p.41
p.41
Close Space PVT Growth of N- and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCSTM Growth Machine
p.47
p.47
Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals
p.53
p.53
Optimization of Seed Crystal Stability at the Initial Growth Stage Depending on Heating Ramp Rates and Gas Flow Channels of SiC Source Powder for Growth of 8-inch N- Type 4H-SiC Single Crystal
p.59
p.59
Growth and Characterization of “IsoPure” Epitaxial Layers for Quantum Applications
p.65
p.65
Remote Epitaxy of SiC: Feasibility, Challenges, and Pathways
p.71
p.71
Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single Crystals
p.79
p.79
Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals
Abstract:
We have investigated the applicability of a new type of 3C-SiC powder source material during PVT growth which consist of a particle size of ca. 10 µm (aggregates up to ca. 150 µm). In-situ X-ray visualization of 75 mm and 100 mm PVT growth runs showed a smooth SiC powder consumption during growth. Using Raman spectroscopy, we have found a high 4H-SiC polytype stability and a low residual stress distribution in the intentionally n-type doped grown crystals.
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Periodical:
Solid State Phenomena (Volume 393)
Pages:
53-58
DOI:
https://doi.org/10.4028/p-LHD7xc
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Online since:
May 2026
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