Paper Titles
Epitaxial Growth and Characterization of 4H-SiC Layer on C-Face and Si-Face Substrates
p.15
Development of High Concentration Uniformity Epitaxial Growth on 200 mm 4H-SiC Wafers
p.21
Ultra-Pure SiC Source Material for Optical SiC Crystal Growth
p.27
Ultra-Thick (~200µm) Epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
p.35
Solution Growth Technique of Silicon Carbide with In Situ Observation
p.41
Close Space PVT Growth of N- and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCSTM Growth Machine
p.47
Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals
p.53
Optimization of Seed Crystal Stability at the Initial Growth Stage Depending on Heating Ramp Rates and Gas Flow Channels of SiC Source Powder for Growth of 8-inch N- Type 4H-SiC Single Crystal
p.59
Growth and Characterization of “IsoPure” Epitaxial Layers for Quantum Applications
p.65

Solution Growth Technique of Silicon Carbide with In Situ Observation

Article Preview
View Pdf By email

Abstract:

In the solution growth method for silicon carbide (SiC) single-crystal fabrication, in-situ observations were performed inside the furnace to monitor the meniscus at the seed–solution interface. A meniscus formed at the contact between the seed crystal and the solution, and variations in the reflections on the solution surface enabled optical monitoring and control of this interface. The observed surface images were also dependent on the frequency of the induction heating. Computational fluid dynamics (CFD) simulations indicated that lowering the heating frequency causes an upward displacement of the solution surface at its central region, producing a locally elevated contact position between the seed crystal and the solution. These findings demonstrate that in-situ observation constitutes an effective approach for precise control of meniscus shape during solution growth of SiC single crystals.

You have full access to the following eBook
Bulk and Epitaxial Growth of SiC Read eBook

Info:

Periodical:

Solid State Phenomena (Volume 393)

Pages:

41-46

DOI:

https://doi.org/10.4028/p-X6hfof

Citation:

Cite this paper

Online since:

May 2026

Authors:

Yoshihisa Abe*, Akihisa Kawabe, J. Osada, K. Kurashige, H. Nakanishi, H. Ishibashi, Toru Ujihara

Keywords:

In Situ Observation, Induction Heating, Meniscus, Solution Growth

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Share:

Citation:

* - Corresponding Author

References

[1] T. Kimoto, H.Watanabe, Appl. Phys. Express 13 120101 (2020).

Google Scholar

[2] K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara, K. Nakajima, Mater. Sci. Forum, 457–460 (2004), p.123.

DOI: 10.4028/www.scientific.net/msf.457-460.123

Google Scholar

[3] N. Watanabe, H. Yoshimoto, Y. Mori, A. Shima, Jpn. J. Appl. Phys. 61 084001 (2015).

Google Scholar

[4] H. Daikoku, M. Kado, A. Seki, K. Sato, T. Bessho, K. Kusunoki, H. Kaidou, Y. Kishida, K. Moriguchi, K. Kamei, Cryst. Growth Des., 16 (2016), p.1256.

DOI: 10.1021/acs.cgd.5b01265

Google Scholar

[5] T. Sakai1, M. Kado, H. Daikoku, S. Harada, T. Ujihara, The 77th Japan Society of Applied Physics Autumn Meeting, 15a-C302-1, 2016 [in japanese].

Google Scholar

[6] G. W. Liu, M. L. Muolo, F. Valenza, A. Passerone, Ceram. Int. 36 (2010) 1177-1188.

Google Scholar