Paper Titles
Preface
Growth of 8-Inch SiC Single Crystals with Low Basal Plane Dislocation Density
p.1
300 mm 4H-SiC Crystal and Substrate Development
p.7
Epitaxial Growth and Characterization of 4H-SiC Layer on C-Face and Si-Face Substrates
p.15
Development of High Concentration Uniformity Epitaxial Growth on 200 mm 4H-SiC Wafers
p.21
Ultra-Pure SiC Source Material for Optical SiC Crystal Growth
p.27
Ultra-Thick (~200µm) Epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
p.35
Solution Growth Technique of Silicon Carbide with In Situ Observation
p.41
Close Space PVT Growth of N- and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCSTM Growth Machine
p.47

Development of High Concentration Uniformity Epitaxial Growth on 200 mm 4H-SiC Wafers

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Abstract:

This study focuses on addressing the challenge of poor doping concentration uniformity during the epitaxial growth of 200 mm 4H-SiC substrates, which is primarily caused by difficulties in thermal field and flow field control. By systematically optimizing key process parameters, including H2 flow rate, C/Si ratio, and growth temperature, a high uniformity concentration technology was developed. This technology has enabled a breakthrough in the performance of n-type epitaxial layers, with the doping concentration uniformity significantly improved to 0.67%. Based on the validation of this technology—encompassing 8,000 epitaxial wafers and thick epitaxial layers (≥30 μm)—the technology demonstrates excellent doping concentration uniformity. This research provides a reliable technical foundation for the large-scale application of large-size SiC materials in power devices.

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Periodical:

Solid State Phenomena (Volume 393)

Pages:

21-25

DOI:

https://doi.org/10.4028/p-kXxK8f

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Cite this paper

Online since:

May 2026

Authors:

Wei Ning Qian*, Fei Hong Huang, Jin An Li, Gan Feng, Jian Hui Zhao, Jun Yong Kang

Keywords:

200 mm 4H-SiC, High Concentration Uniformity, Hot-Wall Reactor

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Creative Commons CC BY 4.0

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* - Corresponding Author

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