Paper Titles
Preface
Growth of 8-Inch SiC Single Crystals with Low Basal Plane Dislocation Density
p.1
300 mm 4H-SiC Crystal and Substrate Development
p.7
Epitaxial Growth and Characterization of 4H-SiC Layer on C-Face and Si-Face Substrates
p.15
Development of High Concentration Uniformity Epitaxial Growth on 200 mm 4H-SiC Wafers
p.21
Ultra-Pure SiC Source Material for Optical SiC Crystal Growth
p.27
Ultra-Thick (~200µm) Epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
p.35
Solution Growth Technique of Silicon Carbide with In Situ Observation
p.41
Close Space PVT Growth of N- and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCSTM Growth Machine
p.47

Growth of 8-Inch SiC Single Crystals with Low Basal Plane Dislocation Density

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Abstract:

Silicon Carbide (SiC) is a pivotal wide-bandgap semiconductor for high-power and high-frequency electronics. However, crystalline defects, particularly Basal Plane Dislocations (BPDs), severely degrade the performance and reliability of bipolar devices by nucleating stacking faults that cause fatal forward voltage drift. This work presents the successful growth of 8-inch, 4° off-axis, n-type 4H-SiC single crystals with significantly reduced BPD density via the Physical Vapor Transport (PVT) method using an improved reactor design. The key innovation involves replacing traditional graphite components with single or polycrystalline SiC for the seed holder and guide tube, subsequently coated with a thin (10 µm) tantalum carbide (TaC) film. This design ensures thermal expansion coefficient matching and reduces thermal radiation emissivity. Etch pit density analysis revealed that the improved design reduced the overall BPD density from over 1027 cm⁻² to a remarkably low 78 cm⁻². Furthermore, it drastically improved the radial uniformity of BPD distribution by stabilizing the thermal gradient and suppressing parasitic polycrystalline nucleation, marking a critical advancement towards high-yield production of high-quality, large-diameter SiC substrates.

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Periodical:

Solid State Phenomena (Volume 393)

Pages:

1-5

DOI:

https://doi.org/10.4028/p-9Ysg3T

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Online since:

May 2026

Authors:

Fu Sheng Zhang*, Yong Liang Shao, Yong Zhong Wu, Bao Guo Zhang, Dong Shi, Hai Xiao Hu, Xiao Peng Hao

Keywords:

Basal Plane Dislocation, Defect Reduction, Tantalum Carbide Coating, Thermal Gradient

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