Paper Titles
300 mm 4H-SiC Crystal and Substrate Development
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Development of High Concentration Uniformity Epitaxial Growth on 200 mm 4H-SiC Wafers
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Ultra-Pure SiC Source Material for Optical SiC Crystal Growth
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Ultra-Thick (~200µm) Epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor
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Solution Growth Technique of Silicon Carbide with In Situ Observation
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Close Space PVT Growth of N- and P-Type Quasi-Bulk SiC in a Classic PVT Setup and a Newly Developed TableTopCSTM Growth Machine
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Application of a Fine Grain 3C-SiC Powder Source Material during PVT Growth of 4H-SiC Crystals
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Optimization of Seed Crystal Stability at the Initial Growth Stage Depending on Heating Ramp Rates and Gas Flow Channels of SiC Source Powder for Growth of 8-inch N- Type 4H-SiC Single Crystal
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Ultra-Thick (~200µm) Epitaxy on 150mm 4H-SiC Wafers Using Single Wafer CVD Reactor

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Abstract:

Thick epitaxy with different buffer and drift layer growth rates are studied. Epilayer with higher growth rates demonstrates lower basal plane dislocaiton (BPD) but higher stacking faults. We use the optimum growth rate found from the aforesaid experiments to achieve 100um and 200um epilayers. BPD pile up was observed, especifally at the edges of the epilayer rendering an exclusion area upto 15mm from the edge. Hence, we argue that it is essential to consider higher exclusion region for thicker epilayers. Large, pits and bumps are observed for thicker epitaxy, upto a diameter of 48µm for 200µm epilayers. Finally, we polish the epilayers and demonstrated 98% and 95% total usable area (TUA) for 100µm and 200µm epitalayers respectively.

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Periodical:

Solid State Phenomena (Volume 393)

Pages:

35-39

DOI:

https://doi.org/10.4028/p-g7vlrZ

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Online since:

May 2026

Authors:

Tawhid Rana*, Taskin Karim, Jonas P. Murphy, Sam Johnson, Nicolas Thierry-Jebali, Edward Sanchez

Keywords:

BPD Crowding, BPD Pileup, Bumps, Edge Exclusion, Pits, Polishing of Epilayers, Silicon Carbide Epitaxy, Thick Epitaxy, Ultra Thick Epitaxy

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