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Optimization of Seed Crystal Stability at the Initial Growth Stage Depending on Heating Ramp Rates and Gas Flow Channels of SiC Source Powder for Growth of 8-inch N- Type 4H-SiC Single Crystal

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Abstract:

Seed crystal stabilization during the initial stage of 200-mm 4H-SiC crystal growth is critical for achieving high-quality wafers with large diameters. This study investigated the effects of heating ramp rates (0 - 6 °C/min) and SiC source powder porosity through both simulation and experimental approaches. Low ramp rates resulted in surface degradation of the seed crystal, whereas high ramp rates induced significant thermal stress, leading to cracking. Optimal ramp rates of 3 - 5 °C/min significantly minimized damage caused by seed crystal loss. Furthermore, high-porosity source powder facilitated adequate gas transport channels, thereby enhancing seed crystal stability. Crystals grown under these optimized conditions demonstrated improved edge morphology, absence of polycrystalline inclusions, and low dislocation densities, with threading screw dislocations (TSD) below 500 cm-2 and basal plane dislocations (BPD) below 1,000 cm-2. These results demonstrate that precise control of thermal parameters and source powder porosity offers an effective strategy for stable seed attachment and reproducible growth of high-quality, large-diameter SiC single crystals.

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Periodical:

Solid State Phenomena (Volume 393)

Pages:

59-64

DOI:

https://doi.org/10.4028/p-NdIf3k

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Online since:

May 2026

Authors:

Chae Young Lee, Su Ho Kim, Jung Woo Choi, Myung Ok Kyun, Jung Gyu Kim, Kap Ryeol Ku, Yeon Suk Jang, Jung Gon Kim, Won Jae Lee*

Keywords:

4H-SiC, 8-Inch SiC Growth, Gas Flow, Physical Vapor Transport, Ramp Rates, Single Crystal, Source Powder

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Creative Commons CC BY 4.0

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