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Numerical Simulation of Optimal Source Temperature Distribution in PVT Method for SiC Single Crystals

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Abstract:

In bulk SiC crystal growth using the PVT method, recrystallization within the source material leads to a decrease in growth rate and source utilization. In this study, numerical simulations were used to investigate the source temperature distribution and its effect on the growth rate and source utilization. Recrystallization in the upper and lower regions was considered separately. The results showed that reducing the source temperature gradient prevents recrystallization in the upper region, and a unidirectional gradient prevents recrystallization in the lower region, leading to higher growth rates and source utilization.

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Periodical:

Solid State Phenomena (Volume 393)

Pages:

79-86

DOI:

https://doi.org/10.4028/p-fX8pPY

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Cite this paper

Online since:

May 2026

Authors:

Shota Tani*, Masato Urakami, Wataru Saito, Shin Ichi Nishizawa

Keywords:

Numerical Simulation, Physical Vapor Transport, Recrystallization, Virtual Reactor

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