Characterization of Emitter Interface Oxide Growth in a Vertical LPCVD Polysilicon Deposition Reactor

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Periodical:

Solid State Phenomena (Volumes 65-66)

Edited by:

Marc Heyns, Marc Meuris and Paul Mertens

Pages:

123-126

DOI:

10.4028/www.scientific.net/SSP.65-66.123

Citation:

M. Ramin et al., "Characterization of Emitter Interface Oxide Growth in a Vertical LPCVD Polysilicon Deposition Reactor", Solid State Phenomena, Vols. 65-66, pp. 123-126, 1999

Online since:

November 1998

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$35.00

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