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HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66Characterization of Emitter Interface Oxide Growth...

Characterization of Emitter Interface Oxide Growth in a Vertical LPCVD Polysilicon Deposition Reactor

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Ultra Clean Processing of Silicon Surfaces IV

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Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

123-126

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.123

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Online since:

November 1998

Authors:

M. Ramin, C. Hechtl, A. Haeusler

Keywords:

Emitter, HFE, Thermal Oxide, Ultra Thin

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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