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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Silicon Impurity-Related Effects on Structural...

Silicon Impurity-Related Effects on Structural Defects in III-V Nitrides

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

525-530

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.525

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Online since:

August 1999

Authors:

N. Shmidt, V. Busov, Valentin V. Emtsev, R. Kyutt, W. Lundin, D.S. Poloskin, V.V. Ratnikov, A.V. Sakharov, A. Usikov

Keywords:

AlGaN, Epilayer, Gallium Nitride (GaN), Micropipe, Mobility, MOCVD, Nanopipes, Silicon, Structural Defects

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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