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Correlation between Intrinsic Stress Distribution and Crystallographic Defects Density Profile in Czochralski Silicon after CMOS Processing
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Silicon Impurity-Related Effects on Structural Defects in III-V Nitrides
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Reconstruction of Deep Level Defect Distribution from DLTS Measurements in Compensated Semiconductors
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Identification of Process Induced Defects in Silicon Power Devices
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Nondestructive Defect Characterization and Engineering in Contemporary Silicon Power Devices
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Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation Processes
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Oriented Silicon Films on Glass Substrates for Device Applications
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Radiation Induced Lattice Defects in InGaP/InGaAs P-HEMTs and their Effect on Device Performance
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Hydrogen Diffusion and Trapping in Microcrystalline Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Nondestructive Defect Characterization and...

Nondestructive Defect Characterization and Engineering in Contemporary Silicon Power Devices

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

545-550

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.545

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Online since:

August 1999

Authors:

Pavel Hazdra, Jan Vobecký

Keywords:

Lifetime Control, Power Device, Radiation Defect, Silicon

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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