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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Radiation Induced Lattice Defects in InGaP/InGaAs...

Radiation Induced Lattice Defects in InGaP/InGaAs P-HEMTs and their Effect on Device Performance

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

563-570

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.563

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Online since:

August 1999

Authors:

H. Ohyama, Eddy Simoen, Satoshi Kuroda, Cor Claeys, Y. Takami, T. Hakata, H. Sunaga

Keywords:

Induced Electron Capture Levels, InGaP/InGaAs, Non-Ionizing Energy Loss, Number of Knock-on Atoms, p-HEMT, Radiation Damage

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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