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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Substrate Material for sub-0.25µm Si Technology...

Substrate Material for sub-0.25µm Si Technology Comparison of Hydrogen Annealed Wafers and Challengers: Evidence for Dopant Enhanced Diffusion

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

577-582

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.577

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Online since:

August 1999

Authors:

M.T. Bostelmann, B. Leroy

Keywords:

Anneal, Boron Outdiffusion, CZ-Si, Hydrogen Anneal, Hydrogen Annealing, Oxygen Precipitates, p/p-epi, PFZ, Silicon, Substrate, Threshold Voltage

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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