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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Hydrogen-Enhanced Transformation of Eletrical and...

Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO₂-Si Systems

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

595-0

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.595

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Online since:

August 1999

Authors:

E.I. Terukov, B.J. Ber, V.Kh. Kudojarova, V.Ju. Davydov, A. Nazarov, Ja.N. Vovk, S. Ashok

Keywords:

Defect Passivation, Hydrogen, Ion Damage, Ion Implantation, Raman Spectroscopy, SIMS, Si-SiO₂ Interface, Structural Transformation

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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