Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO2-Si Systems

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Periodical:

Solid State Phenomena (Volumes 69-70)

Edited by:

H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter

Pages:

595-0

DOI:

10.4028/www.scientific.net/SSP.69-70.595

Citation:

E.I. Terukov et al., "Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO2-Si Systems", Solid State Phenomena, Vols. 69-70, pp. 595-0, 1999

Online since:

August 1999

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$35.00

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