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New Method to Generate the High Concentration Ozonated Water by Using the Ultrapure Water of the Semiconductor Factory
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A Controlled Deposition of Organic Contamination and the Removal with Ozone Based Cleanings
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From Piranha to Barracuda: Mechanism of Ozone and Water Vapor Photoresist Strip in a Wet Bench
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Photo Resist Stripping Using an Alkaline Accelerator Containing Wet-Vapor
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Megasonic Silicon Wafer Cleaning and Its Influence on LSI Devices
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Application of Megasonic Single Wafer Cleaning Technology to LSI Mass Production Line
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Particle Removal Mechanism of Hydrogenated Ultrapure Water with Megasonic Irradiation
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HomeSolid State PhenomenaSolid State Phenomena Vols. 76-77Photo Resist Stripping Using an Alkaline...

Photo Resist Stripping Using an Alkaline Accelerator Containing Wet-Vapor

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Abstract:

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Ultra Clean Processing of Silicon Surfaces V

Info:

Periodical:

Solid State Phenomena (Volumes 76-77)

Pages:

231-234

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.76-77.231

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Online since:

January 2001

Authors:

Sokrates T. Pantelides, Senri Ojima, Takahisa Nitta, Nobuhiro Miki, Tadahiro Ohmi

Keywords:

Alkaline Accelerator, High Dose Ion Implantation, Resist Removal, Wet-Vapor

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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