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HomeSolid State PhenomenaSolid State Phenomena Vol. 93

Solid State Phenomena Vol. 93

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93

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Paper Title Page

Local Electrical Properties of Non-Doped Polycrystalline Silicon Thin-Films Evaluated Using Conductive Atomic Force Microscopy

Authors: Yoichiro Aya, Atsushi Andoh, Satoshi Yamasaki, Kenichiro Wakisaka

339

Effects of Oxidation and Annealing Temperature on Grain Boundary Properties in Polycrystalline Silicon Probed Using Nanometre-Scale Point-Contact Devices

Authors: Toshio Kamiya, Yoshikazu Furuta, Yong-Tsong Tan, Zahid A.K. Durrani, Hiroshi Mizuta, Haroon Ahmed

345

Evaluation of Recombination Velocity at Grain Boundaries in Poly-Si Solar Cells with Laser Beam Induced Current

Authors: N. Sakitani, K. Nishioka, T. Yagi, Y. Yamamoto, Yukari Ishikawa, Yukiharu Uraoka, Takashi Fuyuki

351

Study on Grain Boundary Formation in a Si Film Crystallized by Laser-Induced Periodic Temperature Distribution with a High Incident Angle

Authors: H. Kaki, Y. Nakata, Susumu Horita

355

Formation of Extended Defects in Polycrystalline SiGe by Electron Irradiation

Authors: J. Kikkawa, J. Yamasaki, Y. Ohno, Masanori Kohyama, S. Takeda

361

Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline Low-Temperature GaAs

Authors: N. Kawasaki, Takeshi Yoshimura, Masayoshi Tonouchi, M. Tani, Kazufumi Sakai, H. Katahama

367

Atomistic Simulation Study of Dislocations and Grain Boundaries in Nanoscale Semiconductors

Authors: Kinichi Masuda-Jindo, R. Kikuchi, Seizo Obata, M. Menon

375

Molecular Dynamics Studies of Crystallization and Grain Boundary Formation in Silicon

Authors: Kenjiro Sugio, Hiroshi Fukushima

381

Theoretical Study of the Atomic and Electronic Structure of Grain Boundaries in SiC

Authors: Masanori Kohyama, Koji Tanaka

387

First-Principles Calculation of 3C-SiC(111)/Al Nano-Hetero Polar Interfaces

Authors: Shingo Tanaka, Masanori Kohyama

393

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