Papers by Keyword: Silicon Carbide (SiC)

Paper TitlePage

Authors: Ming Liang Li, Hai Long Wang, Rui Zhang, Jing Li, Jun Hao Li

Abstract: SiC powders with nickel powders and sintering aids were prepared by pressureless sintering at 1500oC under a N2 atmosphere. XRD, TEM, SEM...

333
Authors: Chihiro Iwamoto, Shunichiro Tanaka

Abstract: In-situ HRTEM technique was applied to various substrates and the reaction processes between substrates and molten alloy were compared....

83
Authors: Jyotsna Dutta Majumdar

Abstract: Laser as a source of focused energy may be applied for the modification of microstructure and/or composition of the near surface region of a...

84
Authors: A. Kozanecki, W. Jantsch, S. Lanzerstorfer, Brian J. Sealy, S. Jackson
1545
Authors: R.T. Leonard, Y. Khlebnikov, Adrian R. Powell, C. Basceri, M.F. Brady, I. Khlebnikov, Jason R. Jenny, D.P. Malta, Michael J. Paisley, Valeri F. Tsvetkov, R. Zilli, E. Deyneka, H.McD. Hobgood, Vijay Balakrishna, Calvin H. Carter Jr.

Abstract: Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero...

7
Authors: Megan Snook, Harold Hearne, Ty McNutt, Victor Veliadis, Bettina Nechay, Sharon Woodruff, R.S. Howell, David Giorgi, Joseph White, Stuart Davis

Abstract: To meet the large current handling requirements of modern power conditioning systems, paralleling of a large number of devices is required....

961
Authors: Q. Jon Zhang, Charlotte Jonas, Joseph J. Sumakeris, Anant K. Agarwal, John W. Palmour

Abstract: DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V...

1187
Authors: Q. Jon Zhang, Anant K. Agarwal, Craig Capell, L. Cheng, Michael J. O'Loughlin, Albert A. Burk, John W. Palmour, Sergey L. Rumyantsev, T. Saxena, Michael E. Levinshtein, A. Ogunniyi, Heather O'Brien, Charles Scozzie

Abstract: In this paper, for the first time, we report 12 kV, 1 cm2 SiC GTOs demonstrated with a novel negative bevel termination, which...

1151
Authors: Lin Cheng, Anant K. Agarwal, Craig Capell, Michael J. O'Loughlin, Khiem Lam, Jon Zhang, Jim Richmond, Al Burk, John W. Palmour, Aderinto Ogunniyi, Heather O’Brien, Charles Scozzie

Abstract: In this paper, we report our recently developed 1 cm2, 15 kV SiC p-GTO with an extremely low differential on-resistance...

978
Authors: Lin Cheng, Anant K. Agarwal, Michael J. O'Loughlin, Craig Capell, Khiem Lam, Charlotte Jonas, Jim Richmond, Al Burk, John W. Palmour, Aderinto Ogunniyi, Heather O’Brien, Charles Scozzie

Abstract: In this work, we report our recently developed 16 kV, 1 cm2, 4H-SiC PiN diode results. The SiC PiN diode was built on a 120 µm,...

895
Showing 1 to 10 of 1659 Paper Titles