Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation

Takanori Amamiya; Masayuki Yamamoto; Hitoshi Umezawa; Koji Nakayama; Takeharu Kuroiwa; Shinichiro Kuroki; Yasunori Tanaka

doi:10.4028/p-xm5gzM

Paper Titles

Argon Plasma Treatment of 4H-SiC Surface before Nickel Ohmic Contacts Formation by UV Laser Annealing
p.31

Analysis of Ohmic Contacts Simultaneously Formed on both n-Type and p-Type 4H-SiC
p.37

Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
p.45

Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
p.55

Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing
p.61

Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation
p.67

Investigation of Poly-Si Gated, Al₂O₃-Based High-k Dielectrics on 4H-SiC
p.73

Effect of Inserting an Intervening Layer on Φ_b Reduction in TiN Schottky
p.81

SiC Plasma Dicing for Future High Yield Die Singulation
p.87

HomeMaterials Science ForumMaterials Science Forum Vol. 1159Fabrication of the Planar SiC Gate-all-Around JFET...

Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation

Abstract:

Currently, silicon carbide (SiC) is widely recognized as a wide bandgap semiconductor, with expanding applications in harsh environments, such as high temperature and radiation exposure. In this study, we fabricated a planar structure 4H-SiC gate-all-around junction field-effect transistor (JFET), wherein the channel region is formed through ion implantation at varying doses. We successfully produced both normally-on and normally-off JFETs. Moreover, we constructed a JFET commonsource amplifier. The amplifiers achieved a maximum gain of -226.7 (47.1 dB) at a supply voltage of V_DD = 30 V.

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Periodical:

Materials Science Forum (Volume 1159)

Pages:

67-72

DOI:

https://doi.org/10.4028/p-xm5gzM

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Online since:

September 2025

Authors:

Takanori Amamiya, Masayuki Yamamoto*, Hitoshi Umezawa, Koji Nakayama, Takeharu Kuroiwa, Shinichiro Kuroki, Yasunori Tanaka

Keywords:

Common-Source Amplifier, Gate-all-Around (GAA), Harsh Environment, JFET, Silicon Carbide (SiC)

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* - Corresponding Author

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