SiC Plasma Dicing for Future High Yield Die Singulation

Ben Jones; Alex Croot; Jacob Mitchell; Samira Kazemi; Chris Bolton; Huma Ashraf; Mike Jennings; Owen James Guy

doi:10.4028/p-bFMZ3S

Paper Titles

Argon Plasma Treatment of 4H-SiC Surface before Nickel Ohmic Contacts Formation by UV Laser Annealing
p.31

Analysis of Ohmic Contacts Simultaneously Formed on both n-Type and p-Type 4H-SiC
p.37

Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
p.45

Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
p.55

Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing
p.61

Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation
p.67

Investigation of Poly-Si Gated, Al₂O₃-Based High-k Dielectrics on 4H-SiC
p.73

Effect of Inserting an Intervening Layer on Φ_b Reduction in TiN Schottky
p.81

SiC Plasma Dicing for Future High Yield Die Singulation
p.87

HomeMaterials Science ForumMaterials Science Forum Vol. 1159SiC Plasma Dicing for Future High Yield Die...

SiC Plasma Dicing for Future High Yield Die Singulation

Abstract:

Silicon Carbide is an exceptionally hard and challenging to process semiconductor material. Effective device singulation retaining 100% die yield is hard to achieve with conventional saw dicing. Chips, microcracks and machining abrasions lead to reduced die strength and increased scrap. With rapid advancements in SiC device processing, resolving many fabrication issues, dicing yield losses are becoming an area of industrial concern. Plasma dicing has a proven track record in silicon and presents a potential solution to low yields during SiC dicing. Smooth vertical sidewalls with no machining damage, with etch rates approaching 5 μm/min, position SiC plasma dicing as a viable alternative ready for industrial uptake. Plasma etch processes development using Ni and Cu etch masks, with full singulation have been demonstrated, resulting in improved die strength compared to saw diced samples.

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Periodical:

Materials Science Forum (Volume 1159)

Pages:

87-93

DOI:

https://doi.org/10.4028/p-bFMZ3S

Citation:

Cite this paper

Online since:

September 2025

Authors:

Ben Jones*, Alex Croot, Jacob Mitchell, Samira Kazemi, Chris Bolton, Huma Ashraf, Mike Jennings, Owen James Guy

Keywords:

Dicing, Etch, Plasma Dicing, RIE, Saw Dicing, Singulation, Yield

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Creative Commons CC BY 4.0

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* - Corresponding Author

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