Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing

Carsten Hellinger; Michael Thum; Mathias Rommel

doi:10.4028/p-Zdgj7m

Paper Titles

Argon Plasma Treatment of 4H-SiC Surface before Nickel Ohmic Contacts Formation by UV Laser Annealing
p.31

Analysis of Ohmic Contacts Simultaneously Formed on both n-Type and p-Type 4H-SiC
p.37

Gate Oxide Performance and Reliability on SmartSiC™ Wafers and the Influence of RTA Processing on Gate Oxide Lifetime
p.45

Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
p.55

Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing
p.61

Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation
p.67

Investigation of Poly-Si Gated, Al₂O₃-Based High-k Dielectrics on 4H-SiC
p.73

Effect of Inserting an Intervening Layer on Φ_b Reduction in TiN Schottky
p.81

SiC Plasma Dicing for Future High Yield Die Singulation
p.87

HomeMaterials Science ForumMaterials Science Forum Vol. 1159Formation of Structured Low-Ohmic p-Type Contacts...

Formation of Structured Low-Ohmic p-Type Contacts on Al-Implanted 4H-SiC by Laser Annealing

Abstract:

In this work, a method is presented to form structured low-ohmic p-type contacts on Al-implanted 4H-SiC by laser annealing. A metal layer sequence for p-type contacts suitable for UV laser treatment was developed. Furthermore, a method to protect thermosensitive layers from damages by laser treatment is presented. By structuring the top metallization layer, it is possible to use the metal stack as a self-aligned mask. That makes it possible to laser the entire surface of the wafer, whereby thermosensitive layers are protected from damages by laser annealing by utilizing the optical properties of the individual metal layers. To evaluate the method, TLM structures were electrically characterized. TLM structures were electrically characterized successfully demonstrating the feasibility of the presented approach.

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Periodical:

Materials Science Forum (Volume 1159)

Pages:

61-66

DOI:

https://doi.org/10.4028/p-Zdgj7m

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Online since:

September 2025

Authors:

Carsten Hellinger*, Michael Thum, Mathias Rommel

Keywords:

4H-SiC, Laser Annealing, Ohmic Contact, p-Type, Structured Contact

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Creative Commons CC BY 4.0

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* - Corresponding Author

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