Effect of Inserting an Intervening Layer on Φb Reduction in TiN Schottky

Shigeaki Takagi; Hideo Yoshihashi; Katsuhisa Tanaka; Tomomi Imamura; Hiroshi Kono

doi:10.4028/p-7NEtpc

Paper Titles

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Damage Evaluation and Elemental Analysis of SiC Wafers Processed by Water Jet Guided Laser
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Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation
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Investigation of Poly-Si Gated, Al₂O₃-Based High-k Dielectrics on 4H-SiC
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Effect of Inserting an Intervening Layer on Φ_b Reduction in TiN Schottky
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SiC Plasma Dicing for Future High Yield Die Singulation
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HomeMaterials Science ForumMaterials Science Forum Vol. 1159Effect of Inserting an Intervening Layer on Φb...

Effect of Inserting an Intervening Layer on Φ_b Reduction in TiN Schottky

Abstract:

This report describes the application of titanium nitride (TiN) with a silicon nitride (SiN) intervening layer as a Schottky electrode in a Schottky barrier diode (SBD) made of 4H-silicon carbide (SiC). This reduced the Schottky barrier height (Φ_b) to 0.74eV at room temperature, and it was confirmed that the reduction in Φ_b was due not only to the application of TiN but also to the intervening layer containing SiN at the SiC/TiN interface. Furthermore, TiN with SiN was applied to a device as a Schottky electrode, and the electric field reduction effect was verified by changing the high energy implantation and JBS width. As a result, the forward voltage (V_f) was found to be reduced by a maximum of 0.23 V while suppressing leakage current. The reason for describing the interlayer as “intervening layer containing SiN” is that there may be other substances besides SiN.

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Periodical:

Materials Science Forum (Volume 1159)

Pages:

81-86

DOI:

https://doi.org/10.4028/p-7NEtpc

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Online since:

September 2025

Authors:

Shigeaki Takagi*, Hideo Yoshihashi, Katsuhisa Tanaka, Tomomi Imamura, Hiroshi Kono

Keywords:

4H-SiC, Intervening Layer, Low-Work Function, Schottky Barrier Diode, SiN, TiN

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* - Corresponding Author

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