4H-SiC PIN Diode as High Temperature Multifunction Sensor

Article Preview

Abstract:

An in-house fabricated 4H-SiC PIN diode that has both optical sensing and temperature sensing functions from room temperature (RT) to 550 °C is presented. The two sensing functions can be simply converted from one to the other by switching the bias voltage on the diode. The optical responsivity of the diode at 365 nm is 31.8 mA/W at 550 °C. The temperature sensitivity of the diode is 2.7 mV/°C at the forward current of 1 μA.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

630-633

Citation:

Online since:

May 2017

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2017 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] N. G. Wright, A. B. Horsfall, SiC sensors: a review, Journal of Physics D: Applied Physics. vol. 40, no. 20 (2007) 6345-6354.

DOI: 10.1088/0022-3727/40/20/s17

Google Scholar

[2] C. -M. Zetterling, L. Lanni, R. Ghandi, B. G. Malm, and M. Östling, Future high temperature applications for SiC integrated circuits, Physica Status Solidi C. 9 (2012) 1647-1650.

DOI: 10.1002/pssc.201100689

Google Scholar

[3] N. Zhang, C. -M. Lin, D. G. Senesky, A. P. Pisano, Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C, Applied Physics Letters. 104 (2014) 073504.

DOI: 10.1063/1.4865372

Google Scholar

[4] S. Rao, G. Pangallo and F. G. Della Corte, Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes, IEEE Electron Device Letters, vol. 36, no. 11 (2015) 1205-1208.

DOI: 10.1109/led.2015.2481721

Google Scholar

[5] S. Hou, P. E. Hellström, C. M. Zetterling and M. Östling, 550 °C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization, IEEE Electron Device Letters, vol. 37, no. 12 (2016) 1594-1596.

DOI: 10.1109/led.2016.2618122

Google Scholar

[6] L. Lanni, B. G. Malm, M. Östling and C. M. Zetterling, 500 ºC Bipolar Integrated OR/NOR Gate in 4H-SiC, IEEE Electron Device Letters. vol. 34, no. 9 (2013) 1091-1093.

DOI: 10.1109/led.2013.2272649

Google Scholar

[7] K. Smedfors, L. Lanni, M. Östling, C. M. Zetterling, Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40°C to 500°C, Materials Science Forum, vols. 778-780 (2014) 681-684.

DOI: 10.4028/www.scientific.net/msf.778-780.681

Google Scholar