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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 19 - 20

• Papers
• Abstracts

• p1 Intrinsic/Internal Gettering in Czochralski Silicon Wafers   [ 611 K ]
  Authors: F. Shimura
• p13 Defects and impurities in Multi Layer Structures on Si: The Role of Mechanical Stresses in Gettering of Defects and Impurities by Intrinsic and Extrinsic Grain Boundaries   [ 542 K ]
• p13 Defects and Impurities in Multi Layer Structures on Si: The Role of Mechanical Stresses in Gettering of Defects and Impurities by Intrinsic and Extrinsic Grain Boundaries   [ 542 K ]
  Authors: V.V. Bolotov, M.D. Efremov, V.M. Emeksuzyan, K. Schmalz
• p27 Precipitation of Iron in Silicon: Gettering to Extended Surface Defects Sites   [ 484 K ]
  Authors: M.D. de Coteau, Peter R. Wilshaw, Robert Falster
• p33 Gettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Assessment of Thermal Stability   [ 690 K ]
  Authors: Robert Falster, Z. Laczik, G.R. Booker, Péter Török
• p39 Gettering of Copper and Nickel in Czochralski Silicon by Oxide Particles: Dependence on Oxide Particle Density and Cooling Rate   [ 336 K ]
  Authors: Z. Laczik, Robert Falster, G.R. Booker
• p45 On the Role of Stacking Faults in Copper Precipitation in Silicon   [ 422 K ]
  Authors: Michael Seibt
• p51 TEM Studies of the Gettering of Copper, Palladium and Nickel in Czochralski Silicon by Small Oxide Particles   [ 665 K ]
  Authors: A.R. Bhatti, Robert Falster, G.R. Booker
• p57 An Influence of Carbon on Intrinsic Gettering Quality and Circuit Performance   [ 317 K ]
  Authors: L. Tesar, J. Fojtásaek, J. Kadanka, J. Bartoš
• p65 Intrinsic Gettering in Nitrogen-Doped Cz-Si   [ 103 K ]
  Authors: J.S. Yang, L.B. Li, Duan Lin Que