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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 6 - 7

• Papers
• Abstracts

• p1 Defect Engineering in VLSI-Technologies   [ 720 K ]
  Authors: H. Reimer, W. Nitzsche, M. Reiche
• p13 Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films   [ 305 K ]
  Authors: Robert Falster
• p21 Advances in the Understanding of Oxygen and Carbon in Silicon   [ 750 K ]
  Authors: C. Claeys, Jan Vanhellemont
• p33 Investigations of the Structure, Formation, and Annihilation of Thermally Induced Donors in Silicon   [ 290 K ]
  Authors: J. Reichel, M. Reiche, H. Geuther
• p41 Effect of Volume Defects on Gold Gettering in CZ-SI   [ 289 K ]
  Authors: K. Schmalz, I. Babanskaya, H. Gdanitz, F.G. Kirscht
• p49 Investigations of the Behaviour of Transition Metals in Silicon   [ 424 K ]
  Authors: W. Nitzsche, O. Brodersen, S. Hopfe, M. Reiche, I. Burck
• p57 Defect Engineering for Bicmos-Technology   [ 377 K ]
  Authors: G. Ritter, K.-E. Ehwald, P. Schley
• p65 Investigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and Cathodoluminescence   [ 431 K ]
  Authors: M. Eckstein, A. Jakubowicz, M. Bode, H.U. Habermeier
• p73 Implantation Induced Defect Modification in P Doped Bipolar Structures   [ 406 K ]
  Authors: D. Krueger, J. Dziesiaty
• p79 The Properties of the Defects in Heavy Implanted Silicon   [ 623 K ]
  Authors: V.G. Litovchenko, B.N. Romanyuk