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Silicon Carbide, III-Nitrides and Related Materials

Materials Science Forum Volumes 264 - 268

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• p57 Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification   [ 246 K ]
  Authors: Stephan G. Müller, Robert Eckstein, Dieter Hofmann, L. Kadinski, P. Kaufmann, M. Kölbl, Erwin Schmitt
• p61 Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container   [ 257 K ]
  Authors: Yu.E. Egorov, A.O. Galyukov, S.G. Gurevich, Yuri N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, A.N. Vorob'ev, A.I. Zhmakin
• p65 A Coupled Finite Element Model for the Sublimation Growth of SiC   [ 190 K ]
  Authors: P. Råback, Risto M. Nieminen, Rositza Yakimova, M. Tuominen, Erik Janzén
• p69 Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth   [ 450 K ]
  Authors: M. Müller, Matthias Bickermann, Dieter Hofmann, Arnd Dietrich Weber, Albrecht Winnacker
• p73 Dissolution and Growth of Silicon Carbide Crystals in Melt-Solutions   [ 236 K ]
  Authors: V. Ivantsov, Vladimir Dmitriev
• p77 Sublimation Growth of Bulk β-SiC Crystals on (100) and (111) β-SiC Substrates   [ 219 K ]
  Authors: H.N. Jayatirtha, Michael G. Spencer
• p83 SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor   [ 371 K ]
  Authors: Albert A. Burk, Michael J. O'Loughlin, S.S. Mani
• p89 Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications   [ 536 K ]
  Authors: Roland Rupp, A. Wiedenhofer, Peter Friedrichs, Dethard Peters, Reinhold Schörner, Dietrich Stephani
• p97 Growth and Characterisation of SiC Power Device Material   [ 525 K ]
  Authors: Olof Kordina, Anne Henry, Erik Janzén
• p103 Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD   [ 250 K ]
  Authors: Alexsandre Ellison, Tsunenobu Kimoto, Ivan G. Ivanov, Qamar-ul Wahab, Anne Henry, Olof Kordina, Jian Hui Zhang, Carl G. Hemmingsson, Chun-Yuan Gu, M.R. Leys, Erik Janzén
• p107 Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition   [ 268 K ]
  Authors: Olof Kordina, Kenneth G. Irvine, Joseph J. Sumakeris, H.S. Kong, Michael J. Paisley, Calvin H. Carter Jr.
• p111 Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence   [ 195 K ]
  Authors: T. Yamamoto, Tsunenobu Kimoto, Hiroyuki Matsunami
• p115 Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC   [ 217 K ]
  Authors: L.B. Rowland, Albert A. Burk, C.D. Brandt
• p119 Boron Compensation of 6H Silicon Carbide   [ 258 K ]
  Authors: Michael S. Mazzola, Stephen E. Saddow, Adolf Schöner
• p123 CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane   [ 222 K ]
  Authors: Christer Hallin, Alexsandre Ellison, Ivan G. Ivanov, Anne Henry, Nguyen Tien Son, Erik Janzén