Paper Title
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Authors: Min Sik Kim, Jae Ho Yun, Kyung Hoon Yoon, Byung Tae Ahn
Abstract:Silicone dioxide (SiO2) layer as an electrical insulator and diffusion barrier was deposited on a flexible stainless steel substrate by...
73
Authors: Sang Woo Kim, Shizuo Fujita, Min Su Yi, Han Ki Kim, Bee Lyong Yang, Dae Ho Yoon
Abstract:ZnO nanowalls and nanocolumns were synthesized on Si3N4 (50 nm)/Si (001) substrates at low growth temperature (350 and 400 oC) by...
77
Authors: Yen I Chou, Huey Ing Chen, Chien Kang Hsiung
Abstract:In this study, the dependence of Pd/GaAs Schottky diode on the electroless plating (EP) variable is systematically studied. Both alkaline...
81
Authors: Woong Joon Hwang, Hwa Jun Yeo, Moo Whan Shin
Abstract:This paper discusses about thermal performance of high power light emitted diode (HPLED) implemented with sintered metal wick type heat...
85
Authors: Hee Chang Jeon, Chan Jin Park, Hoon Young Cho, Tae Won Kang, Tae Whan Kim, Jae Eung Oh
Abstract:Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to...
89
Authors: N.K. Park, H.S. Lee, Y.S. No, Tae Whan Kim, Jeong Yong Lee, W.K. Choi
Abstract:The X-ray diffraction (XRD) pattern for the ZnO films grown on Si (100) substrates indicates that the grown ZnO films have a strong c-axis...
93
Authors: Byoung Gue Min, Jong Min Lee, Seong Il Kim, Chul Won Ju, Kyung Ho Lee
Abstract:A reliable fabrication method for providing close spacing between the emitter mesa and the base contact metal of InP-based heterojunction...
97
Authors: Dong Chan Kim, Bo Hyun Kong, Young Yi Kim, Hyung Koun Cho, Jeong Yong Lee, Dong Jun Park
Abstract:ZnO semiconductor has a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV, and displays excellent sensing and optical...
101
Authors: Dae Hwan Kim, Jong Ho Lee, Jeong Hyun Moon, Myong Suk Oh, Ho Keun Song, Jeong Hyuk Yim, Jae Bin Lee, Hyeong Joon Kim
Abstract:Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermal treatment conditions. After the heat treatment at 750 °C,...
105
Authors: Jeong Hyuk Yim, Ho Keun Song, Jeong Hyun Moon, Han Seok Seo, Jong Ho Lee, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim
Abstract:4H-SiC planar MESFETs were fabricated using ion-implantation on high-purity semi-insulating substrate, and their DC and RF performances were...
109
Showing 21 to 30 of 461 Paper Titles