Gettering and Defect Engineering in Semiconductor Technology
Solid State Phenomena Volumes 19 - 20
doi:10.4028/www.scientific.net/SSP.19-20
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p121
Point Defect Engineering for ULSI Silicide Processing
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903 K
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Authors: George A. Rozgonyi, J.W. Honeycutt
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p137
Defect Control and Gettering in Cz-Silicon
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863 K
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Authors: F.G. Kirscht, Eicke R. Weber, I. Babanskaya
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p169
Silicon Device Engineering by Intrinsic Point Defect Control
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292 K
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Authors: N.A. Sobolev, Yu.V. Vyzhigin, B.N. Gresserov, E.I. Sheck, A.I. Kurbakov, E.E. Rubinova, V.A. Trunov
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p175
Defect Engineering in a High-Voltage Substrate Technology
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297 K
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Authors: G. Kissinger, W. Kissinger, K. Tittelbach-Helmrich, U. Retzlaff, J. Knopke, K. Schmalz, G. Morgenstern
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p181
Thermal Wafer Warpage and its Avoidance
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350 K
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Authors: A. Fischer, Hans Richter
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p189
Defects in Crystalline Silicon - History and Outlook
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264 K
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Authors: E. Sirtl
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p195
Defect Spectroscopy in Compound Semiconductors
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628 K
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Authors: Hermann G. Grimmeiss, Mats Kleverman
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p207
Formation and Defect Structure of FeIn Pairs in Silicon
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401 K
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Authors: W. Gehlhoff, P. Emanuelsson, P. Omling, Hermann G. Grimmeiss
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p215
EPR Identification of Mn- or Cr-Acceptor Pairs in Silicon
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275 K
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Authors: J. Kreissl, W. Gehlhoff, K. Irmscher, P. Omling, P. Emanuelsson
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p221
The Influence of RTA on Deep States in Si-Implanted GaAs MESFET Structures Investigated by DLTS and ODLTS
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248 K
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Authors: F. Dubecky, T. Lalinsky
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p227
Study of Electron and Hole Emission from Deep States in Undoped Semi-Insulating GaAs by PICTS and Photo-DLTS
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41 K
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Authors: F. Dubecky, G. Papaioannou, V. Ioannou-Sougleridis, M. Baumgärtner
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p229
'New Donors' in Heat-Treated Cz-Si - What is Really New There?
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343 K
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Authors: Valentin V. Emtsev, Yu.N. Daluda, K. Schmalz
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p235
The Thermal Acceptor in Nitrogen Doped Cz Silicon
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198 K
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Authors: Di Sheng Yang, J. Lu, L. Li, H. Yao, Duan Lin Que
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p241
On Carbon-Implantation Induced Donors in Silicon
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243 K
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Authors: K. Schmalz, P. Gaworzewski, R. Winkler, Wolfgang Skorupa
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p247
A Search on the Identity of the Ev+0.34 eV C-Related Defect in p-Si
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297 K
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Authors: Charalamos A. Londos