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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 6 - 7

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• p127 Gettering of Fast Diffusing Impurities by Radiation Defects in III-V Semiconductors   [ 34 K ]
  Authors: C. Ascheron, M. Rieth, H.A. Klose
• p129 On the Two-Step Nucleation in Internal Gettering for CMOS Fabrication Process   [ 223 K ]
  Authors: J. Jablonski, K. Kucharski, J. Wojciechowski
• p135 Creation of Deep Denuded Zones in CZ Silicon Wafers   [ 272 K ]
  Authors: G. Kissinger, W. Kissinger, K. Tittelbach, K. Schmalz
• p143 Defect Engineering for ULSI Epitaxial Silicon   [ 836 K ]
  Authors: George A. Rozgonyi, R.R. Kola
• p159 Computer-Simulation of Gold-Redistribution in Silicon   [ 241 K ]
  Authors: H. Gdanitz, K. Schmalz
• p165 An Attempt to Simulate Oxygen Precipitation in Silicon   [ 167 K ]
  Authors: M. Macek
• p171 Defect Formation in Dislocation-Free Silicon Containing Oxygen   [ 73 K ]
  Authors: M.G. Mil'vidskii, Vladimir V. Voronkov, V.J. Reznik
• p173 Influence of Preannealing on Oxygen Precipitation   [ 176 K ]
  Authors: S. Nouredin, T. Kormàny
• p179 Silicon Intrinsic Gettering Durability and Effectiveness   [ 27 K ]
  Authors: D. Sachelarie, A. Badoiu, G. Gradinaru, M. Stoica, M. Sachelarie, V. Vivsencu
• p181 Effect of Heat Treatment on Defect Formation in Silicon   [ 299 K ]
  Authors: N.A. Sobolev, Yu.V. Vyzhigin, V.V. Eliseev, V.A. Kostylev, V.M. Likunova, E.I. Sheck
• p187 Effects of Rapid Thermal Annealing Treatments on Electrical and Structural Properties of Silicon   [ 572 K ]
  Authors: E. Susi
• p197 Defect Reactions in Semiconductors   [ 430 K ]
  Authors: Masashi Suezawa, Koji Sumino
• p211 Electronic States in Plastically Deformed Silicon   [ 381 K ]
  Authors: Antonio Castaldini, Daniela Cavalcoli, Anna Cavallini
• p221 Defect Formation and Impurity Redistribution Due to the Electric Field and Elastic Stresses in Interface Regions   [ 602 K ]
  Authors: V.V. Bolotov, V.M. Emeksuzyan, V.A. Stuchinski
• p235 Interaction of Point Defects with Interstitial Clusters, Dislocations and Impurities During in SITU Electron Irradiation of Silicon Crystals in the Electron Microscope   [ 483 K ]
  Authors: A.L. Aseev, Liudmila I. Fedina, D. Hoehl, H. Bartsch