Advanced Materials Research Vols. 105-106

Abstract: Ti3SiC2 is one of the nano-layered ternary ceramics Mn+1AXn, where M is a transition metal, A is an A-group (mostly IIIA or IVA) element, and X is C or N. With the filler of Ag-Cu-Ti, the brazing of Ti3SiC2 has been conducted at 800°C–950°C for 5-10min under 3.5×103Pa in a vacuum. The phase composition and microstructure of the joints were investigated by XRD, SEM AND EPMA. The diffusion of Cu element in fillers through the reaction zone toward Ti3SiC2 is the main controlling step in the bonding process. Joint strengths were evaluated by three point bending test. The maximum flexural strength of joints reaches is 306±11MPa, which is lower than the bending strength of Ti3SiC2, obtained under the same condition.

Abstract: Based on an extensive comparison of test methods for abrasion resistance from home and abroad, a new technique for abrasion resistance at elevated temperature has been developed with some improvements. Two connected airtight chambers are designed to prevent compressed air from entering the sample chamber, so that heat loss of the sample chamber can be reduced and the chamber temperature is less disturbed. The sample surface temperature can reach stable within 5 min and the temperature fluctuation on sample surface can be less than 20°C in the course of inleting the compressed air at working temperatures up to1400°C. The repeatability was tested using float-glass plate as reference sample at ambient temperature and using high alumina bricks for elevated temperature. A variation coefficient under 7% at ambient temperature has been achieved. Comparison of abrasion resistance at elevated temperature was tested respectively on a high alumina brick and on a silicon nitride bonded silicon carbide brick and the results could be significantly distinguished. Nitrogen can be blown into sample chamber during heating the furnace to prevent nonoxide bearing samples from being oxidized.

Abstract: The optical properties of two kinds of single-wall silicon nanotubes (sw-SiNTs) [(n, 0) and (n, n)] with small diameters are investigated by using the first-principles method. For these two kinds of nanotubes, the absorptive part  of dielectric functions exhibits a broad band from 4 to 8eV in the region of 4-11eV, which is attributed to the transition of the  band to the * and  bands. Particularly, another small peak (inter- band transition) at 1.2-2.3 eV in the low-energy region is also identified. In addition, the loss function of these nanotubes are calculated and discussed.

Abstract: Ca1-x(Li1/2Sm1/2)xTiO3 microwave dielectric ceramics in the x range of 0.70 ~ 0.80 were prepared by conventional ceramics fabrication technique. The crystal structure, microstructure and microwave dielectric properties were investigated. The results showed that a single orthorhombic perovskite structure formed within this x range, and the substitution of (Li1/2Sm1/2)2+ ion for Ca2+ ion in A-site has a significant influence on the microwave dielectric properties of the ceramics. With the increase of substitution of (Li1/2Sm1/2)2+ ion with 0.75, the temperature coefficient of resonant frequency τf reaches zero, and it could be attributed that the Sm and Li have a polarizability effect according to its microstructure. The Ca0.25(Li1/2Sm1/2)0.75TiO3 ceramic had a good performance with microwave dielectric properties of τf = 0 ppm/°C, εr = 105.83, and Qf = 3170 GHz.

Abstract: LaAlO3 has gained attention in the last few years because of its favorable microwave dielectric properties, excellent lattice matching and a good matching for thermal expansion. Nanoparticles of LaAlO3 were produced by using gelatin as an organic precursor. The optimum temperature for the phase formation of the precursor sample is found out by TG/DTA analysis. The specific surface area of the powder was measured by the BET technique with nitrogen. X-ray diffraction (XRD) was used to determine the phases present in the calcined powders and to estimate particle size. The morphology of LaAlO3 powder was studied by transmission electron microscopy (TEM). Microwave dielectric properties were measured using a HP8722ET network analyzer. The results demonstrate that pure perovskite LaAlO3 powder formed at 800 °C for 2 h. And the crystallite size was in the range of 17-48 nm. The specimen sintered at 1450 °C for 8 h shows 97.4% of the theoretical density and gave the excellent microwave dielectric properties: εr=23.3 and Qf=32300 GHz.

Abstract: Sr2Bi (4-x/3) Ti (5-x) VxO18 (x = 0.0-0.06) (SBTV) ceramics were prepared by a solid-state reaction method, and the ferroelectric and dielectric properties of the ceramics were investigated with respect to the amount of V deficiency. XRD analysis indicated that the oxide compounds were Aurivillius phases. The Curie temperature of SBTV ceramics was improved by doping of certain amount of V. The V deficiency also led to a steady increase in the density together with a decrease in the coercive field. For the ceramics with x = 0.06, the properties become optimum: d33 = 19 pC/N, Tc = 306oC, Ec = 43.7 KV/cm.

Abstract: Zr-doped Sr2Bi4Ti5O18 (SBTi) bismuth layer-structured ferroelectric ceramics were prepared and studied. XRD patterns revealed that all the ceramic samples were single phase compounds. SEM images showed that dense microstructures with uniform gain size were obtained in all samples. The effects of Zr4+ doping on the dielectric, ferroelectric and piezoelectric properties of SBTi ceramics were also investigated. It was found that Zr4+ dopant gradually decreased the Curie temperature (Tc), enhanced the remnant polarization (2Pr) and decreased the coercive field (Ec) of SBTi ceramics. Furthermore, the piezoelectric properties of the SBTi ceramics were improved by enlarging the content of Zr. The SBTi ceramics with 4 mol% of Zr4+ dopant exhibited good electrical properties: d33 = 21 pC/N, 2Pr = 14.3 μC/cm2, Tc = 251°C, εr = 376, tanδ = 1.8%.

Abstract: BaTiO3 ceramics doped with 1, 2, 3 and 4 mol% La were prepared by sol-gel method. The effects of La doping on structure and dielectric characteristics of Ba1−xLaxTiO3 were investigated. The results show that: All the powders calcined at 800°C were found to be perovskite structure with cubic phase. Ba1−xLaxTiO3 were sintered at 1300°C, phase transition behavior appeared from tetragonal phase to cubic phase with increasing La-doping level. As the doping concentration increases, the grain growth of the Ba1−xLaxTiO3 ceramics was controlled efficiently and Curie point shifted to lower temperature. The grain size decreased from 20μm with 0 mol% La doped to 0.5μm with 4 mol% La doped. The Curie point shift rate was 22 °C/ mol% with increasing La content. The dielectric constant of La doped Ba1−xLaxTiO3 ceramics increased with increasing La content and a maximum value of 8900 was attained with 4 mol% La doped.

Abstract: HfO2 thin film was successfully prepared on the silicon substrate by the Liquid Phase Deposition (LPD) and functionalized organic self-assembled monolayers (SAMs) method. Measurement of contact angle showed that SAMs surface characteristics changed from hydrophobic to hydrophilic after UV irradiation. Photographs of Metallographic Microscope showed that octadecyl trichlorosilane-self- assembled monolayers (OTS-SAMs) had an active effect on the deposition of HfO2 thin film. XRD, SEM and AFM images indicated that the HfO2 thin film with cubic crystal structure was smooth, uniform and dense. Its grain size was between 40-100 nm and the height of thin film varies between 20 and 100 nm.

Abstract: Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.