Advanced Materials Research Vols. 415-417

Abstract: In this work, the dyeing methods with ultrasonic technology and tradition method were investigated. Dye uptake and rubbing fastness as detection index of feather fibers were analysed. The optimum conditions of dyeing in feather fibers with ultrasonic wave technology were determined: weak acid dye: dyeing temperature 70°C, time 40min; reactive dye: dyeing temperature 90°C, time 50min. The results showed that in this dyeing conditions, dye uptake using ultrasonic technology can reach 89.9%, that increased 31.9% comparing with that using traditional method; rubbing fastness can be over 3 grade, and the dry rubbing fastness was raised by 0.5~1 grade as compared with the wet rubbing fastness. It was found that the effect of dyed feather fibers can be better by using ultrasonic technology, which were eco friendly and so give good effect to human in addition to values on garments, and provided the beneficial to test for development of feather fibers.

Abstract: In this study, nadic dialkyl-ester derivatives were synthesized via the reaction of nadic acid (NA) and trialkyl borate. Trialkyl borate was prepared by simple esterification of boric acid and a wide variety of alcohols. This synthesis process is a green process that does not use any solvent and catalysts. The boric acid can be recycled by filtration and can be used to prepare the trialkyl borate. The products were characterized by High-Performance Liquid Chromatography (HPLC) and Nuclear Magnetic Resonance (NMR).

Abstract: In this study, SrBi₄Ti₄O₁₅ (SBT) thin films were deposited onto the SiO₂/p-Si(100) and Pt/Ti/SiO₂/p-Si(100) substrates by using sol-gel method. After deposition, the SBT thin films were then heated by a rapid thermal annealing (RTA) process conducted in air for 1min at 600-800°C. The surface morphologies and the crystalline structures of the SBT thin films were investigated by using SEM and XRD patterns. The grain sizes increased and the pores decreased with rising RTA temperature. In addition, the coercive field decreased and the remanent polarization and saturation polarization increased with rising RTA temperature. The lnJ-E^1/2 curves of the SBT thin films were also investigated to find the leakage current mechanisms correspond either to the Schottky emission or to the Poole-Frenkel emission.

Abstract: Two-dimensional modeling and the computational fluid dynamics simulation are performed to investigate the deposition rate and the uniformity of the thin film under different power in PECVD reaction chamber using 13.56 MHz frequency. The results of the simulation show that as the power increased, the deposition rate of the thin film first increased gradually and then saturated, but the changes of power have little effect on uniformity.

Abstract: The aluminum oxide (Al₂O₃) films are grown on n-type Si-(100) substrate by electron beam evaporation depending on the different substrate temperatures. The residual stress, I-V and C-V characteristics are investigated by wafer stress analyzer and capacitance meter, respectively. The results show that different temperature is important condition to the preparation of Al₂O₃ film. It can be concluded that the residual stress increases with increasing the substrate temperature, while the stress decreases after annealing in N₂ condition. C-V characteristic curves reveal that capacitance increases while the temperature increases. It also can be found that capacitance becomes smaller in the same substrate temperature at various frequencies of 100K, 500K and 1M.

Abstract: Sr_0.6Ba_0.4Nb₂O₆ (SBN) thin films were prepared by radio frequency (RF) sputtering onto the SiO₂/Si/Al and Pt/Ti/Si substrates to form the MFIS and MFM structures. Their deposition rates increased with decreasing oxygen concentration and with increasing RF power. Their optimal deposition parameters were the substrate temperature of 500°C, chamber pressure of 10 mTorr, oxygen concentration of 40%, and RF power of 120W, respectively. The rapid temperature annealing (RTA) process had large effects on the grain growth of the SBN thin films. The effects of different RTA temperatures on the leakage current density - electrical field curves and the capacitance - voltage curves of the SBN thin films were also investigated.

Abstract: Aluminium doped ZnO (ZnO:Al) films were deposited on polymer substrates by RF magnetron sputtering. The effects of deposition temperatures on structure and properties of films were investigated by X-ray diffractometery, Scanning electronic microscopy, UV-visible spectrophotometer, as well as Four-point Probes System. The results revealed that moderate deposition temperature was helpful to improve the crystal quality and optoelectronic properties of ZnO:Al films. The lowest resistivity of 9.5×10^-3Ω•cm and the average transmittance of 76% in the visible region was obtained for the film deposited from ZnO:2wt% Al₂O₃ target at 75°C.

Abstract: Using helicon wave plasma assisted sputtering, ZnO films with strong c-axis orientation have been deposited on Al₂O₃ (0001) substrates. We have studied the effects of RF power on the crystallinity properties of ZnO films. It has been found that increasing RF power improves the in-plane crystalline quality as well as out-of-plane crystalline quality by using XRD. A high transparence in visible region and a sharp fundamental absorption edge at about 370 nm are obtained from the transmittance spectroscopy, which correspond to the less defects and better crystal structure of the film. But under higher RF power, the crystallinity of ZnO films is deteriorated. Meanwhile, the relationship between the RF power and the properties of ZnO films has been discussed.

Abstract: In this study, the SiO polymer coating film was prepared the containing tetraethyl orthosilane (TEOS) solution by the sol-gel method on soda lime glass. After then, the plasma polymer coating was deposited on SiO polymer coated glass by plasma enhanced chemical vapor deposition (PECVD) method at room temperature during 15 seconds. The thiophene monomer was used as organic precursor. It was heat up to 60 oC and bubbled with hydrogen gas which flow rate was 50 sccm. Plasma was ignited by radio frequency (RF, 13.56 MHz) and its power was 10 W. SiO polymer and plasma polymer coated SiO polymer films were investigated by Fourier Transform Infrared (FT-IR), scanning electron microscopy (SEM), ultraviolet-visible (UV-Vis.), water contact angle, the adhesion test, and the pencil hardness test. The IR spectra shows evidence of very thin organic plasma polymer, which could not be measured by SEM cross image. The SEM images show that the morphology of each film was not changed by plasma polymer coating. Low water contact angles showed with both coating. Moreover surface hardness was increased by plasma polymer coating.

Abstract: The effect of nonstoichiometric Pb content on the properties of PZT has been studied. The samples of Pb_xBa_0.04(Li_1/4Sb_3/4)_0.02(Zr_0.52Ti_0.48)_0.98O₃ (0.94≤x≤0.98) were prepared by the solid state route and sintered at 1200
°C. The Pb content changed from 0.94 to 0.98. The result shows that when the Pb content deviates from the stoichiometric ratio (x=0.96), the grain growth and densification of ceramics are promoted. The phases analysis shows that ZrO₂ phase is detected when the amount of Pb is lower than 0.96, while when the Pb content is more than 0.96, the PbO phase is absent. The optimum composition of Pb_xBa_0.04(Li_1/4Sb_3/4)_0.02(Zr_0.52Ti_0.48)_0.98O₃ solid solution system are obtained when x is 0.95, and the ε^T33/ε0, d₃₃ and k_p of the PZT ceramics are: 2281, 516 pC/N and 0.80, respectively.