Defect and Diffusion Forum
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Defect and Diffusion Forum Vol. 264
Paper Title Page
Abstract: The stress state and intermixing in epitaxial Ni/Mo multilayers grown on (11 2 0)
sapphire substrates are investigated using X-ray Diffraction (XRD). Two deposition techniques
were used, namely ion beam sputtering (IBS) and magnetron sputtering (MS), to vary the energy of
the deposited species. In both cases, high-quality superlattices with a Nishiyama-Wasserman
epitaxial relationship Ni [110] (111) // Mo [001] (110) were obtained. The residual stress state
appears rather complex, resulting from two contributions: a growth-stress whose magnitude and
sign depend on growth conditions and coherency stresses of opposite signs in the two elemental
sublayers (tensile for Ni and compressive for Mo). Post-growth ion irradiation at low fluences was
used to induce structural changes in a controlled way. For the case of IBS, it resulted in partial
stress relaxation, as the growth stress could be almost fully relaxed, while the coherency stresses
remained unchanged. For the case of MS, a distinct behavior was found: a stress increase of the
tensile component of Mo-sublayers was observed, while a stress reduction of the compressive
component was noticed. We attribute this phenomenon to ion irradiation induced intermixing. For
the Ni sublayers, this intermixing leads to a stress relaxation. The modeling of the stress evolution
during ion irradiation was performed using a triaxial stress analysis which enabled us to determine
the ‘stress-free and defect-free lattice parameter’, solely linked to chemical effect.
1
Abstract: Redistributions of implanted species after thermal annealing in polycrystalline silicon
(poly-silicon) were studied by secondary ion mass spectrometry. Ten different elements were
implanted into poly-silicon films grown on Si substrates. The implanted energies were chosen such
that the expected ion range is within the poly-silicon film. Thermal anneals were carried out at
temperatures between 300°C and 1000°C in flowing high purity Ar gas. Three different diffusion
behaviors have been observed for these elements. For Be, Na, Ga, and Cr, most of the implanted
ions diffused out to the surface of the poly-silicon film after anneal at 1000°C. For K, Ca, Ti, and
Ge, the impurity ions diffused deeper into the bulk after anneal at 1000°C. For Cl and Mn ions, the
concentration distributions became narrower when annealed at high temperatures.
7
Abstract: In order to investigate interdiffusion in Mo/V multilayers, we present a method that
combines both kinetic mean-field simulations and calculations of x-ray scattered intensity with
disorder effects. Considering preliminary experimental data obtained on Mo(4nm)/V(2nm)
multilayers, we show that the angular shift of spectra observed after annealing, should take place for
both Fickian and asymmetric interdiffusion modes. In contrast, clear signatures of the interdiffusion
modes are found from the simulation of the peak intensities. These results offer interesting
perspectives for a full analysis of the interdiffusion in these systems.
13
Intermixing in Cu/Co: Molecular Dynamics Simulations and Auger Electron Spectroscopy Depth Profiling
19
Abstract: We have investigated the redistribution of B during the crystallization of an amorphous
Si layer homogeneously doped with P. The redistribution of B only occurs for concentrations lower
than 2 × 1020 at cm−3. Crystallization leads to a non “Fickian” redistribution, allowing an abrupt
interface between the regions doped and undoped with B. Once the crystallization is ended, B
diffuses through the layer in the type B regime with a coefficient which is in agreement with the
literature data for diffusion in polycrystalline Si. Although the P distribution is homogeneous in the
entire layer, for a temperature as high as 755 °C, P diffuses towards the region the most
concentrated in B. The B and P interactions are interpreted as chemical interactions.
33
Abstract: Grain boundary and free surface tension for pure copper and copper-tin alloys are
measured. On the base of these data isothermes of grain boundary tension, free surface tension and
isothermes of adsorption are constructed in assumption of a dilute solution. Grain boundary
diffusion coefficients of copper were calculated by using the relation of Borisov et. al. for copper
and copper-tin alloys.
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