Preface
Dynamic Switching Energy Monitoring during Gate Switching Stress to Evaluate Performance Degradation in Hard Switching Electric Power Conversion Systems
p.3
p.3
TDDB and HTGB Study of SiC MOSFET with Excessive Channel Leakage
p.9
p.9
Optimization of Gate Oxide Screening Technology for Commercial SiC Discrete MOSFETs and Power Modules
p.15
p.15
Achieving Low Dit (~5×1010eV-1cm-2), Competitive JG (~ 5×10-10 A cm-2) Performance and Enhanced Post-Stress Flatband Voltage Stability Using Deposited Oxide
p.23
p.23
Investigation of Overcurrent Turn-Off Robustness of 1200 V SiC MOSFETs
p.29
p.29
Prospects and Challenges for SiC Power Devices in MMC-VSC-HVDC Applications
p.39
p.39
Dynamic Characterization and Robustness of SiС MOSFETs Based on SmartSiCTM Engineered Substrates
p.49
p.49
Device Performance and Reliability of SiC CMOS up to 400°C
p.57
p.57
Preface
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Key Engineering Materials (Volume 1024)
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September 2025
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