Paper Titles
Preface
Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
p.1
Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
p.9
A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247 Packages
p.17
Temperature Dependence of the AC-BTI in SiC MOSFETs
p.25
Reliability Challenges of SiC MOSFETs under Continuous Dual-Bias Stress in EV Applications
p.31
Gate Oxide Stability and Degradation Modes of Next Generation SiC MOSFETs
p.39
Impact of Packaging on Discrepancy of Datasheet Static Measurements of SiC Power MOSFETs in Bare Dies and TO-247 Packaged Form-Factors
p.47
Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with Measurements and Simulations
p.55

Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications

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Abstract:

This paper presents the development and evaluation of a 1.2 kV SiC MOSFET-based Positive Temperature Coefficient (PTC) controller designed for energy-efficient heating applications in electric vehicles (xEVs). To address the increasing demand for higher-voltage battery systems in modern xEVs, a PTC controller utilizing wide bandgap (WBG) semiconductor technology was developed. The proposed system leverages a 1.2 kV SiC MOSFET to enable high-frequency operation up to 20 kHz, thereby mitigating audible noise issues by operating beyond the human hearing range. Unlike conventional IGBT-based controllers, which exhibit significant limitations at high switching frequencies, the SiC MOSFET-based controller demonstrates reliable high-frequency operation, reduced switching losses, and improved overall efficiency. Experimental validation confirms that the proposed approach not only ensures low-noise heating operation but also enhances energy efficiency, making it a promising solution for next-generation xEV thermal management systems.

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Periodical:

Key Engineering Materials (Volume 1054)

Pages:

9-16

DOI:

https://doi.org/10.4028/p-2L2smi

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Cite this paper

Online since:

May 2026

Authors:

Jeong Hwan Jang, Jang Kwon Lim*, Kalle Ilves, Ki Sun Song, Dong In Yang, Young Jin Kim, Kyu Bong Yeon

Keywords:

Heating Application, HVAC (Heating Ventilation Air-Conditioning), Junction Temperature (Tj), Negative Temperature Coefficient (NTC), Positive Temperature Coefficient (PTC), SiC MOSFET

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