Paper Titles
Preface
Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
p.1
Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
p.9
A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247 Packages
p.17
Temperature Dependence of the AC-BTI in SiC MOSFETs
p.25
Reliability Challenges of SiC MOSFETs under Continuous Dual-Bias Stress in EV Applications
p.31
Gate Oxide Stability and Degradation Modes of Next Generation SiC MOSFETs
p.39
Impact of Packaging on Discrepancy of Datasheet Static Measurements of SiC Power MOSFETs in Bare Dies and TO-247 Packaged Form-Factors
p.47
Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with Measurements and Simulations
p.55

A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247 Packages

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Abstract:

In this work, the power cycling capability of discrete SiC MOSFETs of seven manufacturers is investigated. The results show that even nominally similar devices can exhibit substantially different power cycling capabilities. The differences among the tested devices involve the scaling factor and the slope of the lifetime curves, but also the dependence of the baseline temperature. Furthermore, some devices exhibit a considerable increase in power cycling performance towards lower temperature swings, which cannot be characterized properly by power cycling tests at typical test conditions with much larger temperature swings. Thus for a proper assessment of the power cycling performance, multiple tests at suitable test conditions are necessary to obtain meaningful results.

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Periodical:

Key Engineering Materials (Volume 1054)

Pages:

17-24

DOI:

https://doi.org/10.4028/p-52OvYf

Citation:

Cite this paper

Online since:

May 2026

Authors:

Felix Hoffmann*, Nando Kaminski

Keywords:

Lifetime Modeling, MOSFET, Power Cycling, Reliability, Silicon Carbide (SiC)

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Creative Commons CC BY 4.0

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* - Corresponding Author

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