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Impact of Packaging on Discrepancy of Datasheet Static Measurements of SiC Power MOSFETs in Bare Dies and TO-247 Packaged Form-Factors

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Abstract:

This paper presents a comparative analysis of 1200 V Silicon Carbide (SiC) MOSFETs characterized at bare die level and in TO-247 packaging. Static parameters including transconductance (gm), drain leakage current (IDS-OFF), output (IDS-VDS) and transfer characteristics (IDS-VGS), gate threshold voltage (VGS(th)) and on-state resistance (RDS(on)) are examined. Results show that the TO-247 package introduces parasitic resistance/inductance and higher thermal impedance, leading to disrupted gm, though lower leakage IDS-OFF, shifted VGS(th), and elevated RDS(on). The study quantifies the discrepancy between intrinsic die behavior and packaged device performance, underscoring the need to de-embed packaging effects for accurate device modelling and optimization.

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Periodical:

Key Engineering Materials (Volume 1054)

Pages:

47-54

DOI:

https://doi.org/10.4028/p-6mHIuS

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Online since:

May 2026

Authors:

Saeed Jahdi*, Konstantinos Floros, Ingo Ludtke, Olayiwola Alatise, Martin Kuball

Keywords:

Datasheet, Dies, Discrete, Measurements, Packaging, SiC MOSFET

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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