Paper Titles
Preface
Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
p.1
Development and Evaluation of a 1.2kV SiC MOSFET-Based PTC Controller for Energy-Efficient xEV Heating Applications
p.9
A Multi-Manufacturer Test Campaign to Assess the Power Cycling Capability of Silicon Carbide MOSFETs in TO-247 Packages
p.17
Temperature Dependence of the AC-BTI in SiC MOSFETs
p.25
Reliability Challenges of SiC MOSFETs under Continuous Dual-Bias Stress in EV Applications
p.31
Gate Oxide Stability and Degradation Modes of Next Generation SiC MOSFETs
p.39
Impact of Packaging on Discrepancy of Datasheet Static Measurements of SiC Power MOSFETs in Bare Dies and TO-247 Packaged Form-Factors
p.47
Impact of the Negative Gate Bias on Short-Circuit Robustness of SiC MOSFETs with Measurements and Simulations
p.55

Temperature Dependence of the AC-BTI in SiC MOSFETs

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Abstract:

The reliability of silicon carbide (SiC) MOSFETs under alternating current bias temperature instability (AC-BTI) is a critical issue for power electronics. Previous studies show inconsistent temperature dependence of threshold voltage drift (ΔVth) induced by AC-BTI and have not conducted tests at temperatures below room temperature. In this study, ΔVth was measured in four commercially available SiC MOSFETs across a wide temperature range (-40°C to 150°C) under bipolar AC stress up to 10¹¹ cycles. Most devices showed larger ΔVth at lower temperatures, while one device exhibited increased ΔVth also at high temperatures. These results may be explained by interface recombination mechanisms, with the device-dependent behavior possibly attributed to structural differences. The findings suggest the need for sub-room temperature testing to identify worst-case degradation scenarios in SiC MOSFETs.

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Periodical:

Key Engineering Materials (Volume 1054)

Pages:

25-29

DOI:

https://doi.org/10.4028/p-2iRgXd

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Cite this paper

Online since:

May 2026

Authors:

Kohei Takei*, Hideya Kishigami, Takashi Setoya

Keywords:

AC-BTI, Bias Temperature Instability (BTI), Dynamic Gate Stress (DGS), Gate Switching Instability (GSI)

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Creative Commons CC BY 4.0

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