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Body Diode Reliability and Reverse Recovery Characteristics of Short Tapered SJ-MOSFET Fabricated by MeV Al Ion Implantation

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Abstract:

MeV-SJ-MOSFET with short tapered SJ columns was developed by high-energy (MeV) Al ion implantation and was evaluated for the reverse recovery characteristics and the body diode reliability compared to those of Multiepi-SJ. MeV-SJ alleviated the increase in on-resistance at elevated temperatures regardless of short SJ columns and exhibited soft reverse recovery characteristics due to the short tapered SJ shape. MeV-SJ also suppressed the body diode degradation more than Multiepi-SJ. It was considered that the carrier lifetime of drift layer of MeV-SJ may be decreased by non-radiative defects.

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Periodical:

Key Engineering Materials (Volume 1057)

Pages:

81-87

DOI:

https://doi.org/10.4028/p-Q9p090

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Cite this paper

Online since:

May 2026

Authors:

Takeshi Tawara*, Kensuke Takenaka, Syunki Narita, Shinsuke Harada

Keywords:

Body Diode, MeV Implantation, Reverse Recovery, Superjunction (SJ)

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References

[1] S. Harada, Y. Kobayashi, S. Kyogoku, T. Morimoto, T. Tanaka, M. Takei, and H. Okumura, IEDM2018 (2018) 181.

Google Scholar

[2] Y. Kobayashi, S. Kyogoku, T. Morimoto, T. Kumazawa, Y. Yamashiro, M. Takei, and S. Harada, Proc. ISPSD2019 (2019) 31.

Google Scholar

[3] M. Sometani, K. Oozono, S. Ji, T. Morimoto, T. Kato, K. Kojima, and S. Harada, ISPSD2022 (2022) 337.

Google Scholar

[4] M. Torky and W. Sung, ICSCRM2024 book of abstracts (2024) 357.

Google Scholar

[5] R. Ghandi, C. Hitchcock, S. Kennerly, ICSCRM2024 book of abstracts (2024) 353.

Google Scholar

[6] Y. Yonezawa, et al., ICSCRM2023 book of abstracts (2023) 707.

Google Scholar

[7] T. Fukui, T. Ishi, T. Tawara, K. Takenaka, and M. Kato, Jpn. J. Appl. Phys. 62 (2023) 016508.

Google Scholar

[8] W. Saito, I. Omura, S. Aida, S. Koduki, M. Izumisawa and T. Ogura, Proc. ISPSD2003 (2003) 45.

Google Scholar

[9] T. Tawara, K. Takenaka, S. Narita, M. Sometani, K. Oozono, S. Ji, T. Morimoto, and S. Harada, Mat. Sci. in Semiconductor Processing 176 (2024) 108324.

DOI: 10.1016/j.mssp.2024.108324

Google Scholar

[10] K. Maeda, K. Murata, T. Tawara, I. Kamata, and H. Tsuchida, Appl. Phys. Exp. 12 (2019) 124002.

Google Scholar

[11] Y. Yamashiro, M. Okada, M. Baba, T. Tanaka, S. Tomohisa, H. Watanabe, K .Kojima, S. Harada and H. Yamaguchi, Mat. Sci. Forum 1062 (2022) 676.

DOI: 10.4028/p-794hb3

Google Scholar

[12] L. Strasta, F. H. C. Carlsson, S. G. Sridhara, J. P. Bergman, A. Henry, T. Egilsson, A. Hallén, and E. Janzén, Appl. Phys. Lett. 78 (2001) 46.

DOI: 10.1063/1.1334907

Google Scholar