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Optical Critical Dimension Metrology for the SiC Trench MOSFET Process

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Abstract:

Silicon carbide (SiC) MOSFETs are widely utilized in power device applications for their numerous advantages, and the device’s properties can be further optimized through the implementation of trench structures. The formation of the trench structure is a multi-step process, in which it is important to monitor the result of each step and ensure that the structure meets the desired requirements. OCD (optical critical dimension) metrology can provide a fast, non-destructive solution for this purpose. In this article, an OCD analysis of structures at two different process steps is presented and compared with the results from the electron microscopy images. OCD results show high sensitivity to the geometrical dimensions of the structure and produce a good correlation with the electron microscopy images. This metrology can provide a means to detect subtle structural differences without causing any damage to the sample.

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Periodical:

Key Engineering Materials (Volume 1057)

Pages:

89-94

DOI:

https://doi.org/10.4028/p-V4pYXX

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Online since:

May 2026

Authors:

Boglárka Dikó, Oleg Rusch, Julien Körfer, Zsófia Kiss, Attila Sütő, Emeric Balogh*

Keywords:

Critical Dimension Metrology, Ellipsometry, OCD, Reflectometry, Trench MOSFET

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Creative Commons CC BY 4.0

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References

[1] Oleg Rusch, Kevin Brueckner and Tobias Erlbacher, Solid State Phenomena, 359, 193-200 (2024).

Google Scholar

[2] Xiaoyu Tan, Guoming Lin, Ankuan Ji and Yuanwei Lin, Materials Science in Semiconductor Processing, 188, 109172 (2025).

Google Scholar

[3] Tsunenobu Kimoto and James A. Cooper, Fundamentals of Silicon Carbide Technology (2014).

Google Scholar

[4] Morten Hannibal Madsen and Poul-Erik Hansen, Surf. Topogr.: Metrol. Prop., 4, 023003 (2016).

Google Scholar

[5] Richard Silver et al., Metrology, Inspection, and Process Control for Microlithography XXI, 6518, 65180U, (2007).

Google Scholar

[6] M. G. Moharam and Thomas K. Gaylord, J. Opt. Soc. Am., 71, 811-818 (1981).

Google Scholar

[7] John M. Jarem, Proc. SPIE 4467, Complex Mediums II: Beyond Linear Isotropic Dielectrics, (9 July 2001).

Google Scholar

[8] Thomas A. Germer and Heather J. Patrick, Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76381F (2010).

DOI: 10.1117/12.846776

Google Scholar