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An Improved Analytical Model for SiC P-I-N Diode Reverse Recovery

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Abstract:

We generalize a recent Si P-i-N reverse-recovery (RR) model to more accurately capture 4H-SiC diode behavior by adding deep-acceptor-limited anode injection, strong recombination (due to >100x shorter optimized high-level lifetimes compared to Si), and improved modeling of the depletion layer dynamics. Closed-form expressions for the growth of the depletion layer are derived, enabling analytical estimates for QRR, tRR, and JPR. The model is validated against Sentaurus RR simulations of optimized 4H-SiC P-i-N diodes spanning BV = 6–17kV and di/dt = 10 A/µs–10 kA/µs, achieving an average reduction in error of >90% for estimations of key switching performance parameters (QRR, tRR, JPR). By correctly capturing the dependence of QRR on di/dt, the model enables better estimates for the high-level lifetime (τHL) directly from the RR waveforms. The differential form enables straightforward utilization of the model to analyze non-idealized RR waveforms. Overall, the generalized model reveals a more favorable QRR–VF trade-off than implied by the unmodified Si model and improves first-order device optimization prior to full design.

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Periodical:

Key Engineering Materials (Volume 1057)

Pages:

103-110

DOI:

https://doi.org/10.4028/p-bGig86

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Cite this paper

Online since:

May 2026

Authors:

Giorgian Borca-Tasciuc*, T. Paul Chow

Keywords:

Analytical Modeling, P-i-n Diodes, Reverse Recovery

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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