Paper Titles
Impact of Active Cell Geometry on the Static Performance of 10-kV 4H-SiC JBS (Junction Barrier Schottky) Diodes
p.69
Fowler-Nordheim Current at Negative Gate Bias in SiC MOSFETs
p.75
Body Diode Reliability and Reverse Recovery Characteristics of Short Tapered SJ-MOSFET Fabricated by MeV Al Ion Implantation
p.81
Optical Critical Dimension Metrology for the SiC Trench MOSFET Process
p.89
Body Diode Performance of the 4H-SiC 3.3 kV Semi-SJ MOSFET
p.95
An Improved Analytical Model for SiC P-I-N Diode Reverse Recovery
p.103
Anomalous Reverse Recovery of Body Diode in 4H-SiC Superjunction DMOSFET
p.111
Dynamic Conduction Behavior of SiC-MOSFETs in the Sub-Threshold Regime and the Impact of Deep Oxide Traps to the Channel Depletion
p.119
Influence of Cell Structure and Topology on Coss of 4H-SiC MOSFET
p.125

Dynamic Conduction Behavior of SiC-MOSFETs in the Sub-Threshold Regime and the Impact of Deep Oxide Traps to the Channel Depletion

Article Preview
View Pdf By email

Abstract:

This paper investigates the dynamic conduction behavior of silicon carbide (SiC) MOSFETs in thesub-threshold regime. We demonstrate that controlled gate bias preconditioning, combined with timeresolvedelectrical measurements in thermal equilibrium, reveals a notable drift in the source-drainvoltage Vsd. The direction of this drift depends on the polarity of gate preconditioning and is directlyrelated to variations in the channel conduction. These effects are shown to be attributed to chargerelease from deep oxide traps, leading to a gradual shift in the flat-band voltage (Vfb) over time.Experimental results reveal that these dynamic effects are most prominent in the depletion and weakinversion regimes. Our findings highlight the influence of oxide trap dynamics on the body diodeforward voltage (Vf) and its significance for the reliability of SiC devices, specifically in its role asthe temperature-sensitive parameter.

You have full access to the following eBook
Performance Analysis of SiC Power Devices Read eBook

Info:

Periodical:

Key Engineering Materials (Volume 1057)

Pages:

119-124

DOI:

https://doi.org/10.4028/p-wV3ZEX

Citation:

Cite this paper

Online since:

May 2026

Authors:

Marvin Gloth*, Drinas Kelmendi, Hamed Azimi, Benjamin Weigt, Tobias Erlbacher

Keywords:

Body Diode, Deep Oxide Traps, Dynamic Conduction, Flat-Band Voltage Shift, Silicon Carbide (SiC), Sub-Threshold Regime, Tunneling

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Share:

Citation:

* - Corresponding Author

References

[1] M. Noah, et al. "Dynamic calibration: How to properly estimate junction temperature in SiC MOSFETs subject to body diode voltage shift. "Proceedings of the 14th Int. Conference on Inte-grated Power Electronics Systems (CIPS), Düsseldorf 2024.

Google Scholar

[2] J. Breuer, et al. "Challenges of Junction Temperature Calibration of SiC MOSFETs for Power Cycling - a Dynamic Approach. "Proceedings of the 14th Int. Conference on Integrated Power Electronics Systems (CIPS), Düsseldorf 2024.

Google Scholar

[3] F. Kato, S. Sato, K. Koui, H. Tanisawa, H. Hozoji and H. Yamaguchi, "Study of Gate Bias Volt-age for Preventing Threshold Shift of SiC–MOSFET Body Diode during Transient Temperature Measurements," 2019 International Conference on Electronics Packaging (ICEP), Niigata, Japan, 2019, pp.88-91

DOI: 10.23919/icep.2019.8733440

Google Scholar

[4] A. Huerner, et al. "Analytical model for the influence of the gate-voltage on the forward con-duction properties of the body-diode in SiC-MOSFETs. "Proceedings of the International Con-ference on Silicon Carbide and Related Materials, ICSCRM 2017 Trans Tech Publications Ltd, 2018. 901-904

DOI: 10.4028/www.scientific.net/msf.924.901

Google Scholar

[5] C. J. Kang, et al. "Charge trap dynamics in a SiO2 layer on Si by scanning capacitance mi-croscopy, Appl. Phys. Lett. 74, 1999. 1815-1817

Google Scholar

[6] R. E. Paulsen, R. R. Siergiej, M. L. French and M. H. White, "Observation of near-interface oxide traps with the charge-pumping technique," in IEEE Electron Device Letters, vol. 13, no. 12, pp.627-629, Dec. (1992)

DOI: 10.1109/55.192866

Google Scholar

[7] C. J. Nicklaw, et al. "The Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2", IEEE Transactions on Nuclear Science, vol. 49, no. 6, Dec. 2002.

Google Scholar