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Impact of Active Cell Geometry on the Static Performance of 10-kV 4H-SiC JBS (Junction Barrier Schottky) Diodes

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Abstract:

This study investigates the influence of active cell geometry on the static performance of 10-kV 4H-Silicon Carbide (SiC) Junction Barrier Schottky (JBS) diodes. Two types of diodes were fabricated and characterized, one with a hexagonal cell and the other with a stripe cell. While forward conduction characteristics were comparable, the reverse leakage current of the hexagonal cell was more than two orders of magnitude lower than that of the stripe cell at 8 kV. 3D TCAD simulations revealed that this discrepancy stems from strong electric field concentrations both at the bottom corners of the P+ junctions and at the center of the Schottky contact in the stripe structure. These localized fields reduce the Schottky barrier height and enhance electron injection. In contrast, the hexagonal cell exhibited a more uniform electric field distribution in both regions, effectively suppressing leakage current. These findings underscore the critical role of active cell geometry in achieving robust reverse blocking performance in ultra-high-voltage SiC JBS diodes by clarifying the physical mechanisms contributing to leakage current behavior.

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Periodical:

Key Engineering Materials (Volume 1057)

Pages:

69-74

DOI:

https://doi.org/10.4028/p-Ncz2vl

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Online since:

May 2026

Authors:

Hojung Lee*, Justin Lynch, Stephen A. Mancini, Skylar deBoer, Miguel Hinojosa, Aivars Lelis, Woongje Sung

Keywords:

10-kV 4H-SiC Junction Barrier Schottky (JBS) Diodes, 3D TCAD Simulation, 4H-Silicon Carbide (SiC), Cell Geometry, Electric Field, Reverse Leakage

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