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Application of a New Method and Criterion for Analyzing Repetitive Surge Current in Commercial SiC Schottky Diodes

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Abstract:

The repetitive peak forward surge current (IF,RM) is a practically important parameter for SiC Schottky diodes, as it ensures reliable and robust circuit designs. However, there is no established method and criterion for this imperative parameter. Manufacturers predominantly provide the non-repetitive peak forward surge current value (IF,SM) in datasheets, which is generally determined from derated measured peak currents that cause diode failures. Consequently, it is assumed that IF,SM enables diodes from various manufacturers with different structural designs to be compared in terms of their repetitive surge current performance. In this paper, we will demonstrate the need for a consistent criterion and a method to determine IF,RM by analyzing repetitive surge currents in representative commercially available SiC Schottky diodes. The analysis is based on a recently proposed method and criterion for the repetitive peak surge current in SiC Schottky diodes that ensures the junction temperature does not exceed the maximum device rating, which is 175°C for the commercially available devices analysed in this study.

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Periodical:

Key Engineering Materials (Volume 1057)

Pages:

55-62

DOI:

https://doi.org/10.4028/p-HeV6Em

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Cite this paper

Online since:

May 2026

Authors:

Jenny Damcevska*, Sima Dimitrijev, Daniel Haasmann, Philip Tanner, Fan Peng Zeng, Lan Luo, Ying Xin Cui, Yu Zhong, Ji Sheng Han

Keywords:

Merged PN Schottky Diode, Non-Repetitive Surge Current, Repetitive Surge Current, Schottky Barrier Diode, Silicon Carbide (SiC), Surge Current

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* - Corresponding Author

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