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HomeKey Engineering MaterialsKey Engineering Materials Vol. 1057Characterization of 4H-SiC Lateral MOSFETs up to...

Characterization of 4H-SiC Lateral MOSFETs up to 773 K

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Abstract:

Experimental analysis of 4H-SiC lateral MOSFETs characteristics up to 773K is shown. The reduction of threshold voltage, V_TH, and the increase of the field effect channel mobility, µ_CH, with temperature cause an increase of MOSFET current up to 623K. However, when scattering with lattice vibration starts to be predominant, µ_CH decreases with an abrupt drop at 773K, reducing MOSFET current. Channel resistance, R_CH, decreases with the temperature up to the range between 523 K and 573 K, implying possible thermal instability effects. However, when the temperature increases over this range, the thermal scattering predominates and R_CH again increases, ensuring thermal stability of MOSFETs.

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Periodical:

Key Engineering Materials (Volume 1057)

Pages:

49-54

DOI:

https://doi.org/10.4028/p-5MC2iz

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Online since:

May 2026

Authors:

Nicola Rinaldi*, Luigi di Benedetto, Mathias Rommel, Alexander May, Leander Baier, Rosalba Liguori, Alfredo Rubino, Gian Domenico Licciardo

Keywords:

4H-SiC CMOS Technology, 4H-SiC Lateral MOSFETs, High Temperature

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